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DO NOT DOWNLOAD, COPY, INSTALL, OR USE THIS CONTENT UNTIL YOU (THE "LICENSEE") HAVE CAREFULLY READ THE FOLLOWING TERMS AND CONDITIONS. BY DOWNLOADING, COPYING, INSTALLING, OR USING THE CONTENT, YOU AGREE TO THE TERMS OF THIS AGREEMENT. IF YOU DO NOT WISH TO SO AGREE, DO NOT DOWNLOAD, COPY, INSTALL, OR USE THE CONTENT.

If you agree to this Agreement on behalf of a company, you represent and warrant that you have authority to bind such company to this Agreement, and your agreement to these terms will be regarded as the agreement of such company. In that event, "Licensee" herein refers to such company. This Agreement is a legal contract between Licensee and Semiconductor Components Industries, LLC a Delaware limited liability company (d/b/a ON Semiconductor) having its principal place of business at 5005 E. McDowell Road, Phoenix, Arizona 85008, U.S.A., ("ON SEMICONDUCTOR") and its affiliates and subsidiaries ("ON Semiconductor").

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2.1 License Grant.

a) ON Semiconductor hereby grants to Licensee a fully paid-up, royalty-free, non-exclusive, non-transferable and non-sublicensable license to modify the Software as necessary to enable Licensee’s products ("Licensee Products") utilizing the Software to operate, or interface with only products sold to Licensee by or on behalf of ON Semiconductor ("ON Semiconductor Products").
b) In addition, ON Semiconductor hereby grants to Licensee a fully paid-up, royalty-free, non-exclusive, non-transferable license to: (i) use the Content, including as modified by Licensee, with Licensee Products solely for the purpose of enabling such Licensee Products to operate or interface with only ON Semiconductor Products; (ii) copy the Content as necessary for such use; and (iii) distribute only the Software and modified Software in a format which is executable by a machine and not human-readable, to Licensee's third party end-user customers ("Customer(s)") for use by such Customers strictly in conjunction with Licensee Products and solely for the purpose of enabling such Licensee Products to operate or interface with ON Semiconductor Products.
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11.8 Interpretation. In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.

11.9 Entire Agreement; Amendment; Counterparts; Facsimile Copies. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof. This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement. Each party hereto may deliver an executed copy of this Agreement to the other party via facsimile or other electronic means, and such executed copy(ies) sent/received via facsimile or other electronic means shall be deemed an original and binding copy.

12. Confidentiality. Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and the Content as ON Semiconductor's "Confidential Information" including: not using the Confidential Information except as expressly set forth herein or otherwise authorized in writing; implementing reasonable procedures to prohibit the disclosure, unauthorized duplication, misuse or removal of the Confidential Information; and not disclosing the Confidential Information to any third party except as may be necessary and required in connection with the rights and obligations under this Agreement and subject to confidentiality obligations at least as protective as those set forth herein, or as otherwise required by law. It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement. Upon termination of this Agreement or upon written request, License shall either return all Confidential Information to ON Semiconductor along with all copies and/or derivatives made, including that on computer databases and copies of portions of the Confidential Information, or destroy all such Confidential Information and certify by written memorandum that all such Confidential Information has been destroyed.

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MOSFETs

Nチャネル、PチャネルおよびコンプリメンタリMOSFET

パワー変換およびスイッチング回路用NチャネルおよびPチャネル・メタル・オキサイド・セミコンダクタ・フィールド効果トランジスタ (MOSFET) 。

2422 製品を掲載(0 製品を除く)   2826 Orderable Parts  
Compliance  
Status  
Channel Polarity  
Configuration  
V(BR)DSS Min (V)  
VGS Max (V)  
VGS(th) Max (V)  
ID Max (A)  
PD Max (W)  
Qg Typ @ VGS = 4.5 V (nC)  
Qg Typ @ VGS = 10 V (nC)  
Ciss Typ (pF)  
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Select Product Data Sheet Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) RDS(on) Max @ VGS = 2.5 V (mΩ) RDS(on) Max @ VGS = 4.5 V (mΩ) RDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Ciss Typ (pF) Package Type
  
 
 
 
                                 
Select Product Data Sheet Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) RDS(on) Max @ VGS = 2.5 V (mΩ) RDS(on) Max @ VGS = 4.5 V (mΩ) RDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Ciss Typ (pF) Package Type
  
 
 
 
                                 
Pb-free
Halide free
 Active     Nチャネル エンハンスメント型FET 
N-Channel
Single
60
±20
2.5
0.115
0.2
 
7500
7500
 
1
20
SOT-23-3
  2N7002  
Pb-free
Halide free
 Active     N-Channel Enhancement Mode Field Effect Transistor 
N-Channel
Single
60
±20
2.5
0.115
0.2
 
7500
7500
 
1
20
SOT-23-3
  2N7002-F169  
Pb-free
Halide free
 Active     N-Channel Enhancement Mode Field Effect Transistor 
N-Channel
 
60
 
2.5
0.115
             
SOT-23-3
 
Pb-free
Halide free
 Active     Nチャンネルロジックレベルエンハンスメント型FET 
N-Channel
Single
100
±20
2
170
0.36
 
10000
6000
 
1.8
73
SOT-23-3
  BSS123  
Pb-free
Halide free
 Active     N-Channel Logic Level Enhancement Mode Field Effect Transistor 
N-Channel
Single
100
±20
2
170
0.36
 
10000
6000
 
1.8
73
SOT-23-3
  BSS123-F169  
Pb-free
Halide free
 Active     N-Channel Logic Level Enhancement Mode Field Effect Transistor 
N-Channel
 
100
 
2
170
             
SOT-23-3
 
Pb-free
Halide free
 Active     50V Nチャネル ロジックレベル エンハンスメント型FET 
N-Channel
Single
50
60
 
1.5
220
0.36
 
6000
3500
 
1
 
SOT-23-3
  BSS138  
Pb-free
Halide free
 Active     50V N-Channel Logic Level Enhancement Mode Field Effect Transistor 
N-Channel
Single
60
 
1.5
220
0.36
 
6000
3500
 
1
 
SOT-23-3
  BSS138-T  
Pb-free
Halide free
 Active     50V N-Channel Logic Level Enhancement Mode Field Effect Transistor 
N-Channel
 
50
 
1.5
220
             
SOT-23-3
 
Pb-free
Halide free
 Active     Power MOSFET for 1-Cell Lithium-ion Battery Protection, 12 V, 5.8 mΩ, 17 A, Dual N-Channel 
N-Channel
Dual
12
8
1.3
17
1.8
9
Q1=Q2= 9.0
Q1=Q2= 5.8
 
75
37
 
WLCSP-6
  EFC2J013NUZTDG  
Pb-free
Halide free
 Active     Power MOSFET for 1-Cell Lithium-ion Battery Protection, 12 V, 5.8 mΩ, 17 A, Dual N-Channel 
N-Channel
Dual
12
8
1.3
17
1.8
Q1=Q2= 9.0
9
Q1=Q2= 5.8
 
75
37
 
WLCSP-6
 
Pb-free
Halide free
 Active     Power MOSFET for 3-Cells Lithium-ion Battery Protection, 30 V, 6.5 mΩ, 19 A, Dual N-Channel, WLCSP6 
N-Channel
Dual
30
20
2.2
19
2.5
 
13
6.5
18
   
WLCSP-6
  EFC4C012NLTDG  
Pb-free
Halide free
 Active     Power MOSFET for 3-Cells Lithium-ion Battery Protection, 30 V, 6.5 mΩ, 19 A, Dual N-Channel, WLCSP6 
N-Channel
Dual
30
20
2.2
19
2.5
 
13
6.5
18
   
WLCSP-6
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 12 A, 260 mΩ, D2PAK 
N-Channel
Single
650
±30
4.5
12
90
   
260
 
24
1010
D2PAK-3 / TO-263-2
  FCB260N65S3  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 12 A, 260 mΩ, D2PAK, N-Channel SuperFET� III MOSFET 650 V, 12 A, 260 m? 
N-Channel
Single
650
±30
4.5
12
90
   
260
 
24
1010
D2PAK-3 / TO-263-2
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 12 A, 260 mΩ, DPAK 
N-Channel
Single
650
±30
4.5
12
90
   
260
 
24
1010
DPAK-3 / TO-252-3
  FCD260N65S3  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 12 A, 260 mΩ, DPAK, N-Channel SuperFET� III MOSFET 650 V, 12 A, 260 m? 
N-Channel
Single
650
±30
4.5
12
90
   
260
 
24
1010
DPAK-3 / TO-252-3
 
Pb-free
 Active     N-Channel SuperFET® III MOSFET 650 V, 30 A, 99 mΩ, TO-247 
N-Channel
Single
650
±30
4.5
30
227
   
99
 
61
2480
TO-247-3
  FCH099N65S3-F155  
Pb-free
 Active     N-Channel SuperFET® III MOSFET 650 V, 30 A, 99 mΩ, TO-247 
N-Channel
Single
650
±30
4.5
30
227
   
99
 
61
2480
TO-247-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 30 A, 99 mΩ, Power88 
N-Channel
Single
650
30
4.5
30
227
   
99
 
56
2270
PQFN-4
  FCMT099N65S3  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 30 A, 99 mΩ, Power88 
N-Channel
Single
650
30
4.5
30
227
   
99
 
56
2270
PQFN-4
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 30 A, 99 mΩ, TO-220 
N-Channel
Single
650
±30
4.5
30
227
   
99
 
61
2480
TO-220-3
  FCP099N65S3  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 30 A, 99 mΩ, TO-220 
N-Channel
Single
650
±30
4.5
30
227
   
99
 
61
2480
TO-220-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 24 A, 125 mΩ 
N-Channel
Single
650
±30
4.5
24
181
   
125
 
46
1940
TO-220-3
  FCP125N65S3  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 24 A, 125 mΩ 
N-Channel
Single
650
±30
4.5
24
181
   
125
 
46
1940
TO-220-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 19 A, 165 mΩ 
N-Channel
Single
650
30
4.5
19
154
   
165
 
39
 
TO-220-3
  FCP165N65S3R0  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 19 A, 165 mΩ 
N-Channel
Single
650
30
4.5
19
154
   
165
 
39
 
TO-220-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 17 A, 190 mΩ, TO-220 
N-Channel
Single
650
±30
4.5
17
144
   
190
 
33
1350
TO-220-3
  FCP190N65S3  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 17 A, 190 mΩ, TO-220 
N-Channel
Single
650
±30
4.5
17
144
   
190
 
33
1350
TO-220-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 17 A, 190 mΩ, TO-220 
N-Channel
Single
650
30
4.5
17
144
   
190
 
33
 
TO-220-3
  FCP190N65S3R0  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 17 A, 190 mΩ, TO-220 
N-Channel
Single
650
30
4.5
17
144
   
190
 
33
 
TO-220-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 12 A, 260 mΩ, TO-220 
N-Channel
Single
650
±30
4.5
12
90
   
260
 
24
1010
TO-220-3
  FCP260N65S3  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 12 A, 260 mΩ, TO-220, N-Channel SuperFET� III MOSFET, 650 V, 12 A, 260 m?, TO-220 
N-Channel
Single
650
±30
4.5
12
90
   
260
 
24
1010
TO-220-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 10 A, 360 mΩ, TO-220 
N-Channel
Single
650
30
4.5
10
83
   
360
 
18
 
TO-220-3
  FCP360N65S3R0  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 10 A, 360 mΩ, TO-220 
N-Channel
Single
650
30
4.5
10
83
   
360
 
18
 
TO-220-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 19 A, 165 mΩ 
N-Channel
Single
650
30
4.5
19
35
   
165
 
35
 
TO-220-3 FullPak
  FCPF165N65S3R0L  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 19 A, 165 mΩ 
N-Channel
Single
650
30
4.5
19
35
   
165
 
35
 
TO-220-3 FullPak
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 12 A, 250 mΩ, TO-220F 
N-Channel
Single
650
30
4.5
12
31
   
250
 
24
 
TO-220-3 FullPak
  FCPF250N65S3R0L  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 12 A, 250 mΩ, TO-220F 
N-Channel
Single
650
30
4.5
12
31
   
250
 
24
 
TO-220-3 FullPak
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 10 A, 360 mΩ 
N-Channel
Single
650
30
4.5
10
27
   
360
 
18
 
TO-220-3 FullPak
  FCPF360N65S3R0L  
Pb-free
Halide free
 Active     N-Channel SuperFET® III MOSFET 650 V, 10 A, 360 mΩ 
N-Channel
Single
650
30
4.5
10
27
   
360
 
18
 
TO-220-3 FullPak
 
Pb-free
Halide free
 Active     N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ 
N-Channel
Single
600
±20
3.5
7.4
     
600
 
20
 
TO-220-3 FullPak
  FCPF600N60ZL1  
Pb-free
Halide free
 Active     N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ, N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ 
N-Channel
Single
600
±20
3.5
7.4
     
600
 
20
 
TO-220-3 FullPak
 
AEC Qualified
PPAP Capable
Pb-free
 Active     30V、80A、1.5mΩ、DPAK
NチャンネルPowerTrench® 
N-Channel
 
30
20
4
80
254
   
1.8
 
187
11825
D2PAK-3 / TO-263-2
  FDB8160-F085  
AEC Qualified
PPAP Capable
Pb-free
 Active     30V, 80A, 1.5mΩ N-Channel PowerTrench® MOSFET 
N-Channel
 
30
20
4
80
254
   
1.8
 
187
11825
D2PAK-3 / TO-263-2
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     N-Channel PowerTrench® MOSFET, 100 V 
N-Channel
Single
100
± 20
2 - 4
185
300
   
4.1
 
47
3240
TO-LL 8L
  FDBL86066-F085  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     N-Channel PowerTrench® MOSFET, 100 V 
N-Channel
Single
100
± 20
2 - 4
185
300
   
4.1
 
47
3240
TO-LL 8L
 
Pb-free
Halide free
 Active     -20V Pチャネル 2.5V駆動 PowerTrench® MOSFET 
P-Channel
Single
-20
12
-1.5
-5.8
1.6
43
30
 
7.2
17
1330
TSOT-23-6
  FDC608PZ  
Pb-free
Halide free
 Active     -20V P-Channel 2.5V PowerTrench® Specified MOSFET 
P-Channel
Single
-20
12
-1.5
-5.8
1.6
43
30
 
7.2
17
1330
TSOT-23-6
  FDC608PZ-F171  
Pb-free
Halide free
 Active     -20V P-Channel 2.5V PowerTrench® Specified MOSFET 
P-Channel
 
-20
12
-1.5
-5.8
1.6
43
30
 
7.2
17
1330
TSOT-23-6
 
Pb-free
Halide free
 Active     デュアル N & Pチャネル 2.5V駆動 PowerTrench® MOSFET 
Complementary
Dual
20
±20
8
8
±1.5
-1.9
N:2.7 , P: -1.6
0.96
N:120, P:250
N: 80, P: 170
250
~NA~
3.7
2.85
315
TSOT-23-6
  FDC6327C  
Pb-free
Halide free
 Active     Dual N & P-Channel 2.5V Specified PowerTrench® MOSFET 
Complementary
Dual
±20
8
±1.5
N:2.7 , P: -1.6
0.96
N:120, P:250
N: 80, P: 170
~NA~
3.7
2.85
315
TSOT-23-6
  FDC6327C-F169  
Pb-free
Halide free
 Active     Dual N & P-Channel 2.5V Specified PowerTrench® MOSFET     
20
 
8
-1.9
     
250
     
TSOT-23-6
 
Pb-free
Halide free
 Active     -20V 統合型 PチャネルPowerTrench® MOSFET + ショットキーダイオード 
P-Channel
 
-20
12
-1.5
-2.2
0.96
200
150
   
3.7
369
TSOT-23-6
  FDC6392S  
Pb-free
Halide free
 Active     -20V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode 
P-Channel
 
-20
12
-1.5
-2.2
0.96
200
150
   
3.7
369
TSOT-23-6
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET 15 V, 50 A, 22 mΩ 
N-Channel
Single
150
±20
4
50
160
   
22
 
28
1900
DPAK-3 / TO-252-3
  FDD86250-F085  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET 15 V, 50 A, 22 mΩ 
N-Channel
Single
150
±20
4
50
160
   
22
 
28
1900
DPAK-3 / TO-252-3
 
Pb-free
Halide free
 Active     デュアルNチャネル、デジタルFET 
N-Channel
Dual
25
8
1.5
8
0.5
0.3
Q1=Q2=600
Q1=Q2=450
 
1.4
1.64
50
SC-88-6 / SC-70-6 / SOT-363-6
  FDG6303N  
Pb-free
Halide free
 Active     Dual N-Channel Digital FET 
N-Channel
Dual
25
8
1.5
0.5
0.3
Q1=Q2=600
Q1=Q2=450
 
1.4
1.64
50
SC-88-6 / SC-70-6 / SOT-363-6
  FDG6303N-F169  
Pb-free
Halide free
 Active     Dual N-Channel Digital FET 
N-Channel
 
25
 
8
0.5
             
SC-88-6 / SC-70-6 / SOT-363-6
 
Pb-free
Halide free
 Active     デュアルPチャネル、デジタルFET 
P-Channel
Dual
-25
-8
-8
-1.5
-0.41
0.3
Q1=Q2=1800
Q1=Q2=1100
 
1.8
1.1
62
SC-88-6 / SC-70-6 / SOT-363-6
  FDG6304P  
Pb-free
Halide free
 Active     Dual P-Channel Digital FET 
P-Channel
Dual
-25
-8
-1.5
-0.41
0.3
Q1=Q2=1800
Q1=Q2=1100
 
1.8
1.1
62
SC-88-6 / SC-70-6 / SOT-363-6
  FDG6304P-F169  
Pb-free
Halide free
 Active     Dual P-Channel Digital FET 
P-Channel
 
-25
 
-8
-0.41
             
SC-88-6 / SC-70-6 / SOT-363-6
 
Pb-free
Halide free
 Active     デュアル N & Pチャネル、デジタルFET 
Complementary
Dual
-25
±25
-8
-8
±1.5
-0.41
N: 0.5, P: -0.41
0.3
N:600, P:1500
N: 450, P: 1100
N: 450, P: 1100
 
1.1
62
SC-88-6 / SC-70-6 / SOT-363-6
  FDG6321C  
Pb-free
Halide free
 Active     Dual N & P Channel Digital FET 
Complementary
Dual
±25
-8
±1.5
N: 0.5, P: -0.41
0.3
N:600, P:1500
N: 450, P: 1100
N: 450, P: 1100
 
1.1
62
SC-88-6 / SC-70-6 / SOT-363-6
  FDG6321C-F169  
Pb-free
Halide free
 Active     Dual N & P Channel Digital FET     
-25
 
-8
-0.41
             
SC-88-6 / SC-70-6 / SOT-363-6
 
Pb-free
Halide free
 Active     Power MOSFET 80V,51A,10mOhm,Single N-channel, Power 33, Std. gate 
N-Channel
Single
80
20
4
51
2.4
   
10
 
15
1070
PQFN-8
  FDMC010N08C  
Pb-free
Halide free
 Active     Power MOSFET 80V,51A,10mOhm,Single N-channel, Power 33, Std. gate 
N-Channel
Single
80
20
4
51
2.4
   
10
 
15
1070
PQFN-8
 
Pb-free
Halide free
 Active     N-Channel PowerTrench® MOSFET 100 V, 5.5 A, 37 mΩ 
N-Channel
Single
20
±20
4
5.5
50
   
37
50
41
1910
PQFN-8
  FDMC035N10X1  
Pb-free
Halide free
 Active     N-Channel PowerTrench® MOSFET 100 V, 5.5 A, 37 mΩ 
N-Channel
Single
20
±20
4
5.5
50
   
37
50
41
1910
PQFN-8
 
Pb-free
Halide free
 Active     -20V PチャネルPowerTrench® MOSFET 
P-Channel
Single
-20
8
-1
8
-18
-12
41
9.8
8
 
53
83
5910
WDFN-8
  FDMC510P  
Pb-free
Halide free
 Active     -20V P-Channel PowerTrench® MOSFET 
P-Channel
Single
-20
8
-1
-18
41
9.8
8
 
53
83
5910
WDFN-8
  FDMC510P-F106  
Pb-free
Halide free
 Active     -20V P-Channel PowerTrench® MOSFET 
P-Channel
 
-20
8
-1
-18
41
9.8
8
 
53
83
5910
WDFN-8
  FDMC510P-T  
Pb-free
Halide free
 Active     -20V P-Channel PowerTrench® MOSFET 
P-Channel
 
-20
 
8
-12
             
WDFN-8
 
Pb-free
Halide free
 Active     Power MOSFET 80V, 147A, 3.1mOhm , Single N-channel,Power56, Std. gate 
N-Channel
Single
80
20
4
147
2.7
   
3.1
 
52
3820
PQFN-8
  FDMS003N08C  
Pb-free
Halide free
 Active     Power MOSFET 80V, 147A, 3.1mOhm , Single N-channel,Power56, Std. gate 
N-Channel
Single
80
20
4
147
2.7
   
3.1
 
52
3820
PQFN-8
 
Pb-free
Halide free
 Active     Nチャネル ロジックレベル エンハンスメント型FET 
N-Channel
Single
30
8
1
8
2.2
0.5
 
92
65
82
7
7
300
SOT-23-3
  FDN337N  
Pb-free
Halide free
 Active     N-Channel Logic-Level Enhancement Mode Field Effect Transistor 
N-Channel
Single
30
8
1
2.2
0.5
 
92
65
7
7
300
SOT-23-3
  FDN337N-F169  
Pb-free
Halide free
 Active     N-Channel Logic-Level Enhancement Mode Field Effect Transistor 
N-Channel
 
30
 
8
2.2
     
82
     
SOT-23-3
 
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ 
N-Channel
Single
100
20
4
128
150
   
4.5
 
48
3615
TO-220-3
  FDP4D5N10C  
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ, N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ 
N-Channel
Single
100
20
4
128
150
   
4.5
 
48
3615
TO-220-3
 
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ 
N-Channel
Single
100
20
4
76
107
   
8.5
 
25
1765
TO-220-3
  FDP8D5N10C  
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ, N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ 
N-Channel
Single
100
20
4
76
107
   
8.5
 
25
1765
TO-220-3
 
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ 
N-Channel
Single
100
20
4
128
37.5
   
4.5
 
48
3615
TO-220-3 FullPak
  FDPF4D5N10C  
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ, N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ 
N-Channel
Single
100
20
4
128
37.5
   
4.5
 
48
3615
TO-220-3 FullPak
 
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ 
N-Channel
Single
100
20
4
76
35
   
8.5
 
25
1765
TO-220-3 FullPak
  FDPF8D5N10C  
Pb-free
Halide free
 Active     N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ, N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ 
N-Channel
Single
100
20
4
76
35
   
8.5
 
25
1765
TO-220-3 FullPak
 
Pb-free
Halide free
 Active     30V デュアルNチャネル ロジックレベル PowerTrench® MOSFET 
N-Channel
Dual
30
20
3
20
7.5
1.6
 
Q1=Q2=17
Q1=Q2=13
7
9
1130
SOIC-8
  FDS6910  
Pb-free
Halide free
 Active     30V Dual N-Channel Logic Level PowerTrench® MOSFET 
N-Channel
Dual
30
20
3
7.5
1.6
 
Q1=Q2=17
Q1=Q2=13
7
9
1130
SOIC-8
  FDS6910-Z  
Pb-free
Halide free
 Active     30V Dual N-Channel Logic Level PowerTrench® MOSFET 
N-Channel
 
30
 
20
7.5
             
SOIC-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     30V、7.0A、19mΩ、SO-8、ロジックレベル
デュアルNチャンネルPowerTrench® 
N-Channel
Dual
30
20
2.5
7
1.6
 
Q1=Q2=30
Q1=Q2=23
6
9.2
475
SOIC-8
  FDS8984-F085  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     30V, 7.0A,19mΩ, SO-8, Logic Level
Dual N-Channel PowerTrench® 
N-Channel
Dual
30
20
2.5
7
1.6
 
Q1=Q2=30
Q1=Q2=23
6
9.2
475
SOIC-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     -20 V、-3.5 A、130 mΩ、SO-8
PチャンネルPowerTrench® 
P-Channel
 
-20
8
-1
-3.5
2.5
180
0.13
130
0.13
6.2
6
405
SOIC-8
  FDS9431A-F085  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     -20V, -3.5A, 130mΩ, SO-8
P-Channel PowerTrench® 
P-Channel
 
-20
8
-1
-3.5
2.5
180
130
0.13
0.13
6.2
6
405
SOIC-8
  FDS9431A-TF085  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     -20V, -3.5A, 130mΩ, SO-8
P-Channel PowerTrench® 
P-Channel
 
-20
8
-1
 
2.5
180
130
 
6.2
 
405
SOIC-8
 
Pb-free
Halide free
 Active     Nチャネル、デジタルFET 
N-Channel
Single
25
8
1.06
8
0.22
0.35
5000
4000
 
0.49
1.64
0.49
9.5
SOT-23-3
  FDV301N  
Pb-free
Halide free
 Active     N-Channel,Digital FET 
N-Channel
Single
25
8
1.06
0.22
0.35
5000
4000
 
1.64
0.49
0.49
9.5
SOT-23-3
  FDV301N-F169  
Pb-free
Halide free
 Active     N-Channel,Digital FET 
N-Channel
 
25
 
8
0.22
             
SOT-23-3
 
Pb-free
Halide free
 Active     デジタルFET、Nチャネル 
N-Channel
Single
25
8
1
8
0.68
0.35
600
450
600
1.1
1.64
50
SOT-23-3
  FDV303N  
Pb-free
Halide free
 Active     Digital FET, N-Channel 
N-Channel
Single
25
8
1
0.68
0.35
600
450
 
1.1
1.64
50
SOT-23-3
  FDV303N-F169  
Pb-free
Halide free
 Active     Digital FET, N-Channel 
N-Channel
 
25
 
8
0.68
     
600
     
SOT-23-3
 
Pb-free
Halide free
 Active     Pチャネル デジタルFET 
P-Channel
Single
-25
-8
-8
-1.5
-0.46
0.35
1500
1100
   
1.1
63
SOT-23-3
  FDV304P  
Pb-free
Halide free
 Active     P-Channel Digital FET 
P-Channel
Single
-25
-8
-1.5
-0.46
0.35
1500
1100
   
1.1
63
SOT-23-3
  FDV304P-F169  
Pb-free
Halide free
 Active     P-Channel Digital FET 
P-Channel
 
-25
 
-8
-0.46
             
SOT-23-3
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     FDWS9508L_F085 
P-Channel
 
-40
±16
-3
-80
214
 
8.5
4.9
 
82
4840
DFN-8
  FDWS9508L-F085  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     FDWS9508L_F085 
P-Channel
 
-40
±16
-3
-80
214
 
8.5
4.9
 
82
4840
DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     P-Channel Logic Level Power Trench® MOSFET 
N-Channel
Single
-40
±16
-3
-65
107
 
13
8
 
48
3360
DFN-8
  FDWS9509L-F085  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     P-Channel Logic Level Power Trench® MOSFET, P-Channel Logic Level Power Trench® MOSFET 
N-Channel
Single
-40
±16
-3
-65
107
 
13
8
 
48
3360
DFN-8
 
Pb-free
Halide free
 Active     -20V コモンドレイン Pチャネル 1.5V PowerTrench® WL-CSP MOSFET 
P-Channel
Dual
-20
8
-1
-3
1.5
Q1=Q2=141
Q1=Q2=126
       
WLCSP-6
  FDZ1905PZ  
Pb-free
Halide free
 Active     -20V Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET 
P-Channel
Dual
-20
8
-1
-3
1.5
Q1=Q2=141
Q1=Q2=126
       
WLCSP-6
 
Pb-free
Halide free
 Active     -20V Pチャネル 1.7V駆動 PowerTrench® WL-CSP MOSFET 
P-Channel
 
-20
12
-1.5
-1
1.9
130
90
90
12
7
660
WLCSP-6
  FDZ193P  
Pb-free
Halide free
 Active     -20V P-Channel 1.7V PowerTrench® WL-CSP MOSFET 
P-Channel
 
-20
12
-1.5
-1
1.9
130
90
90
12
7
660
WLCSP-6
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     -100 V、-33.5 A、60 mΩ、D2PAK PチャンネルQFET® 
P-Channel
 
-100
±30
-4
-33.5
155
   
60
 
85
2240
D2PAK-3 / TO-263-2
  FQB34P10TM-F085  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     -100V, -33.5A, 60mΩ, D2PAK
P-Channel QFET® 
P-Channel
 
-100
±30
-4
-33.5
155
   
60
 
85
2240
D2PAK-3 / TO-263-2
  FQB34P10TM-F085P  
AEC Qualified
PPAP Capable
Pb-free
 Active     -100V, -33.5A, 60mΩ, D2PAK
P-Channel QFET® 
P-Channel
 
-100
±30
-4
 
155
   
60
 
85
2240
D2PAK-3 / TO-263-2
  FQB34P10TM-TF085  
AEC Qualified
PPAP Capable
Pb-free
 Active     -100V, -33.5A, 60mΩ, D2PAK
P-Channel QFET® 
P-Channel
 
-100
                   
D2PAK-3 / TO-263-2
 
Pb-free
 Active     NチャネルQFET® MOSFET 150V、11.6A、160mΩ 
N-Channel
 
150
±25
4
11.6
53
   
160
 
23
700
TO-220-3 FullPak
  FQPF16N15  
Pb-free
 Active     N-Channel QFET® MOSFET 150V, 11.6A, 160mΩ 
N-Channel
 
150
±25
4
11.6
53
   
160
 
23
700
TO-220-3 FullPak
 
Pb-free
 Active     NチャネルQFET® MOSFET 250V、2.3A、2.2Ω 
N-Channel
 
250
5
5
2.3
27
   
2200
4
4
130
TO-220-3 FullPak
  FQPF3N25  
Pb-free
 Active     N-Channel QFET® MOSFET 250V, 2.3A, 2.2Ω 
N-Channel
 
250
5
5
2.3
27
   
2200
4
4
130
TO-220-3 FullPak
 
Pb-free
Halide free
 Active     Pチャネル エンハンスメント型FET 
P-Channel
Single
-60
±20
-3
-0.18
0.36
 
7500
5000
 
1.8
79
SOT-23-3
  NDS0605  
Pb-free
Halide free
 Active     P-Channel Enhancement Mode Field Effect Transistor 
P-Channel
Single
-60
±20
-3
-0.18
0.36
 
7500
5000
 
1.8
79
SOT-23-3
  NDS0605-F169  
Pb-free
Halide free
 Active     P-Channel Enhancement Mode Field Effect Transistor 
P-Channel
 
-60
 
-3
-0.18
             
SOT-23-3
 
Pb-free
Halide free
 Active     Nチャネル ロジックレベル エンハンスメント型FET 
N-Channel
Single
30
20
2
20
1.7
0.5
43
 
125
85
3.4
3.5
195
SOT-23-3
  NDS355AN  
Pb-free
Halide free
 Active     N-Channel Logic Level Enhancement Mode Field Effect Transistor 
N-Channel
Single
30
20
2
1.7
43
0.5
 
125
85
3.4
3.5
195
SOT-23-3
  NDS355AN-F169  
Pb-free
Halide free
 Active     N-Channel Logic Level Enhancement Mode Field Effect Transistor 
N-Channel
 
30
 
20
1.7
             
SOT-23-3
  NDS355AN-NB9L007A  
Pb-free
Halide free
 Active     N-Channel Logic Level Enhancement Mode Field Effect Transistor 
N-Channel
 
30
20
2
1.7
43
 
125
85
3.4
3.5
195
SOT-23-3
 
Pb-free
Halide free
 Active     Nチャネル エンハンスメント型FET 
N-Channel
Single
60
±20
2.5
280
96
 
3000
2000
40
0.6
20
SOT-23-3
  NDS7002A  
Pb-free
Halide free
 Active     N-Channel Enhancement Mode Field Effect Transistor 
N-Channel
Single
60
±20
2.5
280
96
 
3000
2000
40
0.6
20
SOT-23-3
  NDS7002A-F169  
Pb-free
Halide free
 Active     N-Channel Enhancement Mode Field Effect Transistor 
N-Channel
 
60
 
2.5
280
             
SOT-23-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 40 A, 82 mΩ 
N-Channel
Single
650
30
5
40
313
   
82
 
81
 
D2PAK-3 / TO-263-2
  NTB082N65S3F  
Pb-free
Halide free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 40 A, 82 mΩ 
N-Channel
Single
650
30
5
40
313
   
82
 
81
 
D2PAK-3 / TO-263-2
 
Pb-free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 75 A, 27.4 mΩ, TO-247 
N-Channel
Single
650
30
5
75
595
   
27.4
6
259
7690
TO-247-3
  NTH027N65S3F-F155  
Pb-free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 75 A, 27.4 mΩ, TO-247 
N-Channel
Single
650
30
5
75
595
   
27.4
6
259
7690
TO-247-3
 
Pb-free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 65 A, 40 mΩ, TO-247 
N-Channel
Single
650
30
5
65
446
   
40
 
158
 
TO-247-3
  NTHL040N65S3F  
Pb-free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 65 A, 40 mΩ, TO-247 
N-Channel
Single
650
30
5
65
446
   
40
 
158
 
TO-247-3
 
Pb-free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 40 A, 82 mΩ, TO-247 
N-Channel
Single
650
30
5
40
313
   
82
 
81
 
TO-247-3
  NTHL082N65S3F  
Pb-free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 40 A, 82 mΩ, TO-247 
N-Channel
Single
650
30
5
40
313
   
82
 
81
 
TO-247-3
 
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 40 V, 145 A, 2.65 mΩ 
N-Channel
Dual
40
20
2.2
145
62
 
3.9
2.65
25
54
3170
SO-8FL Dual / DFN-8
  NTMFD5C446NLT1G  
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 40 V, 145 A, 2.65 mΩ 
N-Channel
Dual
40
20
2.2
145
62
 
3.9
2.65
25
54
3170
SO-8FL Dual / DFN-8
 
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 40V, 52A, 7.4 mΩ 
N-Channel
Dual
40
20
2.2
52
40
 
12.6
7.4
7
16
997
SO-8FL Dual / DFN-8
  NTMFD5C466NLT1G  
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 40V, 52A, 7.4 mΩ 
N-Channel
Dual
40
20
2.2
52
40
 
12.6
7.4
7
16
997
SO-8FL Dual / DFN-8
 
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 40V, 36A, 11.5 mΩ 
N-Channel
Dual
40
20
2.2
36
24
 
17.8
11.5
4
9
590
SO-8FL Dual / DFN-8
  NTMFD5C470NLT1G  
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 40V, 36A, 11.5 mΩ 
N-Channel
Dual
40
20
2.2
36
24
 
17.8
11.5
4
9
590
SO-8FL Dual / DFN-8
 
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 60 V, 111 A, 4.2 mΩ 
N-Channel
Dual
60
20
2.2
111
125
 
5.8
4.2
16
37
2546
SO-8FL Dual / DFN-8
  NTMFD5C650NLT1G  
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 60 V, 111 A, 4.2 mΩ 
N-Channel
Dual
60
20
2.2
111
125
 
5.8
4.2
16
37
2546
SO-8FL Dual / DFN-8
 
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 60 V, 49 A, 11.9 mΩ   
Dual
60
20
2.2
49
45
 
16.8
11.9
5.7
12.3
793
SO-8FL Dual / DFN-8
  NTMFD5C672NLT1G  
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 60 V, 49 A, 11.9 mΩ   
Dual
60
20
2.2
49
45
 
16.8
11.9
5.7
12.3
793
SO-8FL Dual / DFN-8
 
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 60V, 42A, 14.4 mΩ 
N-Channel
Dual
60
20
2.2
42
37
 
20.4
14.4
4.7
10
640
SO-8FL Dual / DFN-8
  NTMFD5C674NLT1G  
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 60V, 42A, 14.4 mΩ 
N-Channel
Dual
60
20
2.2
42
37
 
20.4
14.4
4.7
10
640
SO-8FL Dual / DFN-8
 
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 60V, 26A, 28 mΩ 
N-Channel
Dual
60
20
2.2
26
19
 
41
28
2
5
350
SO-8FL Dual / DFN-8
  NTMFD5C680NLT1G  
Pb-free
Halide free
 Active     Power MOSFET, Dual N-Channel, 60V, 26A, 28 mΩ 
N-Channel
Dual
60
20
2.2
26
19
 
41
28
2
5
350
SO-8FL Dual / DFN-8
 
Pb-free
Halide free
 Active     Power MOSFET, Single N−Channel, Logic Level, 30 V, 1.15 mΩ, 230 A 
N-Channel
Single
30
20
2.2
230
96
 
1.7
1.15
37
82
5780
SO-8FL / DFN-5
  NTMFS4C302NT1G  
Pb-free
Halide free
 Active     Power MOSFET, Single N−Channel, Logic Level, 30 V, 1.15 mΩ, 230 A 
N-Channel
Single
30
20
2.2
230
96
 
1.7
1.15
37
82
5780
SO-8FL / DFN-5
 
Pb-free
Halide free
 Active     Power Mosfet 60V,280A,1.2mOhm,Single N-Channel ,SO8-FL 
N-Channel
Single
60
20
4
280
3.9
   
1.2
 
80
6400
SO-8FL / DFN-5
  NTMFS5C604NT1G  
Pb-free
Halide free
 Active     Power Mosfet 60V,280A,1.2mOhm,Single N-Channel ,SO8-FL 
N-Channel
Single
60
20
4
280
3.9
   
1.2
 
80
6400
SO-8FL / DFN-5
 
Pb-free
Halide free
 Active     Power Mosfet 60V,230A,1.6mOhm,Single N-Channel ,SO8-FL 
N-Channel
Single
60
20
4
230
3.8
   
1.6
 
60.2
4830
SO-8FL / DFN-5
  NTMFS5C612NT1G  
Pb-free
Halide free
 Active     Power Mosfet 60V,230A,1.6mOhm,Single N-Channel ,SO8-FL 
N-Channel
Single
60
20
4
230
3.8
   
1.6
 
60.2
4830
SO-8FL / DFN-5
 
Pb-free
Halide free
 Active     Power Mosfet 60V, 94A, 4.5mOhm, Single N-Channel , SO8-FL 
N-Channel
Single
60
20
4
94
3.7
   
4.5
 
20.4
1510
SO-8FL / DFN-5
  NTMFS5C645NT1G  
Pb-free
Halide free
 Active     Power Mosfet 60V, 94A, 4.5mOhm, Single N-Channel , SO8-FL 
N-Channel
Single
60
20
4
94
3.7
   
4.5
 
20.4
1510
SO-8FL / DFN-5
 
Pb-free
Halide free
 Active     Power MOSFET 40V, 210A, 1.4mOhm, Single N Channel, SO8FL,logic Level 
N-Channel
Single
40
20
2
210
3.1
 
2
1.4
30
60
4000
SO-8FL / DFN-5
  NTMFS5H414NLT1G  
Pb-free
Halide free
 Active     Power MOSFET 40V, 210A, 1.4mOhm, Single N Channel, SO8FL,logic Level 
N-Channel
Single
40
20
2
210
3.1
 
2
1.4
30
60
4000
SO-8FL / DFN-5
 
Pb-free
Halide free
 Active     Power MOSFET 80V, 203A, 2.1 mOhm, Single N-Channel, SO8-FL. 
N-Channel
Single
80
20
4
203
3.8
   
2.1
 
85
5530
SO-8FL / DFN-5
  NTMFS6H800NT1G  
Pb-free
Halide free
 Active     Power MOSFET 80V, 203A, 2.1 mOhm, Single N-Channel, SO8-FL. 
N-Channel
Single
80
20
4
203
3.8
   
2.1
 
85
5530
SO-8FL / DFN-5
 
Pb-free
Halide free
 Active     Power MOSFET 80V, 153A, 2.8 mOhm, Single N-Channel, SO8-FL. 
N-Channel
Single
80
20
4
203
3.8
   
2.1
 
85
5530
SO-8FL / DFN-5
  NTMFS6H801NT1G  
Pb-free
Halide free
 Active     Power MOSFET 80V, 153A, 2.8 mOhm, Single N-Channel, SO8-FL. 
N-Channel
Single
80
20
4
203
3.8
   
2.1
 
85
5530
SO-8FL / DFN-5
 
Pb-free
Halide free
 Active     Power MOSFET 80V, 123A, 3.7 mOhm, Single N-Channel, SO8-FL. 
N-Channel
Single
80
20
4
123
3.8
   
3.7
 
46
3100
SO-8FL / DFN-5
  NTMFS6H818NT1G  
Pb-free
Halide free
 Active     Power MOSFET 80V, 123A, 3.7 mOhm, Single N-Channel, SO8-FL. 
N-Channel
Single
80
20
4
123
3.8
   
3.7
 
46
3100
SO-8FL / DFN-5
 
Pb-free
Halide free
 Active     Small Signal MOSFET, -30V P-Channel XLLGA3 Package 
P-Channel
Single
-30
±20
-3
-0.148
-0.137
0.121
0.14
 
7000
4000
0.7
0.7
9.1
XLLGA-3
  NTNS41006PZTCG  
Pb-free
Halide free
 Active     Small Signal MOSFET, -30V P-Channel XLLGA3 Package 
P-Channel
Single
-30
±20
-3
-0.148
-0.137
0.14
0.121
 
7000
4000
0.7
0.7
9.1
XLLGA-3
 
Pb-free
Halide free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 40 A, 82 mΩ in TO-220 
N-Channel
Single
650
30
4.5
40
313
   
82
 
81
 
TO-220-3
  NTP082N65S3F  
Pb-free
Halide free
 Active     N-Channel SuperFET® III FRFET® MOSFET 650 V, 40 A, 82 mΩ in TO-220 
N-Channel
Single
650
30
4.5
40
313
   
82
 
81
 
TO-220-3
 
Pb-free
Halide free
 Active     Power MOSFET 80V, 68A, 9.5 mOhm, Single N-Channel, u8FL 
N-Channel
Single
80
20
4
68
107
   
9.5
12.6
19
1140
WDFN-8 / u8FL
  NTTFS6H850NTAG  
Pb-free
Halide free
 Active     Power MOSFET 80V, 68A, 9.5 mOhm, Single N-Channel, u8FL 
N-Channel
Single
80
20
4
68
107
   
9.5
12.6
19
1140
WDFN-8 / u8FL
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 30V, 90A, 4.1 mOhm, Single N−Channel, DPAK, Logic Level. 
N-Channel
Single
30
20
2.2
61
57
 
6
4.1
 
14
1970
DPAK-3
  NVD4C05NT4G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 30V, 90A, 4.1 mOhm, Single N−Channel, DPAK, Logic Level. 
N-Channel
Single
30
20
2.2
61
57
 
6
4.1
 
14
1970
DPAK-3
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40 V, 2.9 mΩ, Dual N-Channel, Logic Level 
N-Channel
Dual
40
20
3.5
127
89
   
2.9
 
38
2450
SO-8FL Dual / DFN-8
  NVMFD5C446NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40 V, 2.9 mΩ, Dual N-Channel, Logic Level 
N-Channel
Dual
40
20
3.5
127
89
   
2.9
 
38
2450
SO-8FL Dual / DFN-8
  NVMFD5C446NWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40 V, 2.9 mΩ, Dual N-Channel, Logic Level 
N-Channel
Dual
40
20
3.5
127
89
   
2.9
 
38
2450
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 145A, 2.65 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2
149
125
 
Q1: 3.9, Q2: 3.9
Q1: 2.65, Q2: 2.65
16
54
3170
SO-8FL Dual / DFN-8
  NVMFD5C446NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 145A, 2.65 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2
149
125
 
Q1: 3.9, Q2: 3.9
Q1: 2.65, Q2: 2.65
16
54
3170
SO-8FL Dual / DFN-8
  NVMFD5C446NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 145A, 2.65 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2
149
125
 
Q1: 3.9, Q2: 3.9
Q1: 2.65, Q2: 2.65
16
54
3170
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 84A, 4.7 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2.2
73
50
 
Q1=Q2=7.2
Q1=Q2=4.7
4
23
1300
SO-8FL Dual / DFN-8
  NVMFD5C462NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 84A, 4.7 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2.2
73
50
 
Q1=Q2=7.2
Q1=Q2=4.7
4
23
1300
SO-8FL Dual / DFN-8
  NVMFD5C462NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 84A, 4.7 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2.2
73
50
 
Q1=Q2=7.2
Q1=Q2=4.7
4
23
1300
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40 V, 46 A, 8.1 mΩ, Dual N-Channel, Logic Level 
N-Channel
Dual
40
20
3.5
49
38
   
8.1
 
11
38
650
SO-8FL Dual / DFN-8
  NVMFD5C466NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40 V, 46 A, 8.1 mΩ, Dual N-Channel, Logic Level 
N-Channel
Dual
40
20
3.5
49
38
   
8.1
 
11
38
650
SO-8FL Dual / DFN-8
  NVMFD5C466NWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40 V, 46 A, 8.1 mΩ, Dual N-Channel, Logic Level 
N-Channel
Dual
40
20
3.5
49
38
   
8.1
 
11
650
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 52A, 7.4 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2.2
52
40
 
Q1: 12.6, Q2: 12.6
Q1: 7.4. Q2: 7.4
16
7
16
997
SO-8FL Dual / DFN-8
  NVMFD5C466NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 52A, 7.4 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2.2
52
40
 
Q1: 12.6, Q2: 12.6
Q1: 7.4. Q2: 7.4
16
16
7
997
SO-8FL Dual / DFN-8
  NVMFD5C466NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 52A, 7.4 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2.2
52
40
 
Q1: 12.6, Q2: 12.6
Q1: 7.4. Q2: 7.4
16
16
7
997
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40 V, 36 A, 11.4 mΩ, Dual N-Channel, Logic Level 
N-Channel
Dual
40
20
3.5
36
28
   
11.7
2.5
8
420
SO-8FL Dual / DFN-8
  NVMFD5C470NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40 V, 36 A, 11.4 mΩ, Dual N-Channel, Logic Level 
N-Channel
Dual
40
20
3.5
36
28
   
11.7
2.5
8
420
SO-8FL Dual / DFN-8
  NVMFD5C470NWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40 V, 36 A, 11.4 mΩ, Dual N-Channel, Logic Level 
N-Channel
Dual
40
20
3.5
36
28
   
11.7
2.5
8
420
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 36A, 11.4 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2.2
32
24
 
Q1: 17.8, Q2: 17.8
Q1: 11.5, Q2: 11.5
5.7
9
590
SO-8FL Dual / DFN-8
  NVMFD5C470NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 36A, 11.4 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2.2
32
24
 
Q1: 17.8, Q2: 17.8
Q1: 11.5, Q2: 11.5
5.7
9
590
SO-8FL Dual / DFN-8
  NVMFD5C470NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 40V, 36A, 11.4 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
40
±20
2.2
32
24
 
Q1: 17.8, Q2: 17.8
Q1: 11.5, Q2: 11.5
5.7
9
590
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 111A, 4.2 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
125
125
 
Q1: 5.8, Q2: 5.8
Q1: 4.2, Q2: 4.2
4.7
37
2546
SO-8FL Dual / DFN-8
  NVMFD5C650NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 111A, 4.2 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
125
125
 
Q1: 5.8, Q2: 5.8
Q1: 4.2, Q2: 4.2
4.7
37
2546
SO-8FL Dual / DFN-8
  NVMFD5C650NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 111A, 4.2 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
125
125
 
Q1: 5.8, Q2: 5.8
Q1: 4.2, Q2: 4.2
4.7
37
2546
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 49A, 11.9 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
45
45
 
Q1: 16.8, Q2: 16.8
Q1: 11.9, Q2: 11.9
2
12
793
SO-8FL Dual / DFN-8
  NVMFD5C672NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 49A, 11.9 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
45
45
 
Q1: 16.8, Q2: 16.8
Q1: 11.9, Q2: 11.9
2
12
793
SO-8FL Dual / DFN-8
  NVMFD5C672NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 49A, 11.9 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
45
45
 
Q1: 16.8, Q2: 16.8
Q1: 11.9, Q2: 11.9
2
12
793
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 42A, 14.4 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
37
37
 
Q1: 20.4, Q2: 20.4
Q1: 14.4, Q2: 14.4
13.2
10
640
SO-8FL Dual / DFN-8
  NVMFD5C674NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 42A, 14.4 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
37
37
 
Q1: 20.4, Q2: 20.4
Q1: 14.4, Q2: 14.4
13.2
10
640
SO-8FL Dual / DFN-8
  NVMFD5C674NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 42A, 14.4 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
37
37
 
Q1: 20.4, Q2: 20.4
Q1: 14.4, Q2: 14.4
13.2
10
640
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 17A, 39 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
19
19
 
Q1=Q2=41
Q1=Q2=28
11.5
5
350
SO-8FL Dual / DFN-8
  NVMFD5C680NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 17A, 39 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
19
19
 
Q1=Q2=41
Q1=Q2=28
11.5
5
350
SO-8FL Dual / DFN-8
  NVMFD5C680NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 60V, 17A, 39 mOhm, Dual N-Channel, SO8-FL, Logic Level. 
N-Channel
Dual
60
±20
2.2
19
19
 
Q1=Q2=41
Q1=Q2=28
11.5
5
350
SO-8FL Dual / DFN-8
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -40 V, 4.2 mΩ, -140 A, Single P-Channel 
P-Channel
Single
-40
20
-2.6
-140
200
 
7.2
4.2
 
136
7400
SO-8FL / DFN-5
  NVMFS5A140PLZT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -40 V, 4.2 mΩ, -140 A, Single P-Channel 
P-Channel
Single
-40
20
-2.6
-140
200
 
7.2
4.2
 
136
7400
SO-8FL / DFN-5
  NVMFS5A140PLZT3G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -40 V, 4.2 mΩ, -140 A, Single P-Channel 
P-Channel
Single
-40
20
-2.6
-140
200
 
7.2
4.2
 
136
7400
SO-8FL / DFN-5
  NVMFS5A140PLZWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -40 V, 4.2 mΩ, -140 A, Single P-Channel, Wettable Flank 
P-Channel
Single
-40
20
-2.6
-140
200
 
7.2
4.2
 
136
7400
SO-8FL / DFN-5
  NVMFS5A140PLZWFT3G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -40 V, 4.2 mΩ, -140 A, Single P-Channel, Wettable Flank 
P-Channel
Single
-40
20
-2.6
-140
200
 
7.2
4.2
 
136
7400
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -60 V, 7.7 mΩ, -100 A, Single P-Channel 
P-Channel
Single
-60
20
-2.6
-100
200
 
10.5
7.7
 
160
7700
SO-8FL / DFN-5
  NVMFS5A160PLZT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -60 V, 7.7 mΩ, -100 A, Single P-Channel 
P-Channel
Single
-60
20
-2.6
-100
200
 
10.5
7.7
 
160
7700
SO-8FL / DFN-5
  NVMFS5A160PLZT3G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -60 V, 7.7 mΩ, -100 A, Single P-Channel 
P-Channel
Single
-60
20
-2.6
-100
200
 
10.5
7.7
 
160
7700
SO-8FL / DFN-5
  NVMFS5A160PLZWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -60 V, 7.7 mΩ, -100 A, Single P-Channel, Wettable Flank 
P-Channel
Single
-60
20
-2.6
-100
200
 
10.5
7.7
 
160
7700
SO-8FL / DFN-5
  NVMFS5A160PLZWFT3G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET, -60 V, 7.7 mΩ, -100 A, Single P-Channel, Wettable Flank 
P-Channel
Single
-60
20
-2.6
-100
200
 
10.5
7.7
 
160
7700
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 203A, 2.1 mOhm, Single N-Channel, SO8-FL. 
N-Channel
Single
80
20
4
203
3.8
   
2.1
 
85
5530
SO-8FL / DFN-5
  NVMFS6H800NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 203A, 2.1 mOhm, Single N-Channel, SO8-FL., 1500 / Tape & Reel 
N-Channel
Single
80
20
4
203
3.8
   
2.1
 
85
5530
SO-8FL / DFN-5
  NVMFS6H800NWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 203A, 2.1 mOhm, Single N-Channel, SO8-FL., 1500 / Tape & Reel. Wettable Flank 
N-Channel
Single
80
20
4
203
3.8
   
2.1
 
85
5530
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 153A, 2.8 mOhm, Single N-Channel, SO8-FL. 
N-Channel
Single
80
20
4
157
3.8
   
2.8
 
64
4120
SO-8FL / DFN-5
  NVMFS6H801NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 153A, 2.8 mOhm, Single N-Channel, SO8-FL., 1500 / Tape & Reel 
N-Channel
Single
80
20
4
157
3.8
   
2.8
 
64
4120
SO-8FL / DFN-5
  NVMFS6H801NWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 153A, 2.8 mOhm, Single N-Channel, SO8-FL., 1500 / Tape & Reel. Wettable Flank 
N-Channel
Single
80
20
4
157
3.8
   
2.8
 
64
4120
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 123A, 3.7 mOhm, Single N-Channel, SO8-FL. 
N-Channel
Single
80
20
4
123
3.8
   
3.7
 
46
3100
SO-8FL / DFN-5
  NVMFS6H818NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 123A, 3.7 mOhm, Single N-Channel, SO8-FL., 1500 / Tape & Reel 
N-Channel
Single
80
20
4
123
3.8
   
3.7
 
46
3100
SO-8FL / DFN-5
  NVMFS6H818NWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 123A, 3.7 mOhm, Single N-Channel, SO8-FL., 1500 / Tape & Reel. Wettable Flank 
N-Channel
Single
80
20
4
123
3.8
   
3.7
 
46
3100
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 68A, 9.5 mOhm, Single N-Channel, u8FL 
N-Channel
Single
80
20
4
68
3.2
   
9.5
 
19
1140
WDFN-8 / u8FL
  NVTFS6H850NTAG  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 68A, 9.5 mOhm, Single N-Channel, u8FL, 1500 / Tape & Reel 
N-Channel
Single
80
20
4
68
3.2
   
9.5
 
19
1140
WDFN-8 / u8FL
  NVTFS6H850NWFTAG  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 80V, 68A, 9.5 mOhm, Single N-Channel, u8FL, 1500 / Tape & Reel. Wettable Flank 
N-Channel
Single
80
20
4
68
3.2
   
9.5
 
19
1140
WDFN-8 / u8FL
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Logic Level, 40 V, 228 A, 1.2 mΩ 
N-Channel
Single
40
20
2.1
228
125
 
1.8
1.2
42
92
5600
SO-8FL / DFN-5
  NVMFS5C426NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Logic Level, 40 V, 228 A, 1.2 mΩ 
N-Channel
Single
40
20
2.1
228
125
 
1.8
1.2
42
92
5600
SO-8FL / DFN-5
  NVMFS5C426NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Logic Level, 40 V, 228 A, 1.2 mΩ 
N-Channel
Single
40
20
2.1
228
125
 
1.8
1.2
42
92
5600
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N−Channel, 40 V, 4.5 mΩ, 78 A 
N-Channel
Single
40
20
3.5
78
55
   
4.5
 
17
1150
SO-8FL / DFN-5
  NVMFS5C456NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N−Channel, 40 V, 4.5 mΩ, 78 A 
N-Channel
Single
40
20
3.5
78
55
   
4.5
 
17
1150
SO-8FL / DFN-5
  NVMFS5C456NWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N−Channel, 40 V, 4.5 mΩ, 78 A 
N-Channel
Single
40
20
3.5
78
55
   
4.5
 
17
1150
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Standard Level, 40 V, 68 A, 5.3 mΩ 
N-Channel
Single
40
20
3.5
68
50
   
5.3
 
15
1000
SO-8FL / DFN-5
  NVMFS5C460NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Standard Level, 40 V, 68 A, 5.3 mΩ 
N-Channel
Single
40
20
3.5
68
50
   
5.3
 
15
1000
SO-8FL / DFN-5
  NVMFS5C460NWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Standard Level, 40 V, 68 A, 5.3 mΩ 
N-Channel
Single
40
20
3.5
68
50
   
5.3
 
15
1000
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Standard Level, 40 V, 48 A, 8 mΩ 
N-Channel
Single
40
20
3.5
48
37
   
8
 
10
646
SO-8FL / DFN-5
  NVMFS5C466NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Standard Level, 40 V, 48 A, 8 mΩ 
N-Channel
Single
40
20
3.5
48
37
   
8
 
10
646
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Logic Level, 40 V, 50 A, 7.3 mΩ 
N-Channel
Single
40
20
2.2
50
37
 
12
7.3
7
16
880
SO-8FL / DFN-5
  NVMFS5C466NLT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Logic Level, 40 V, 50 A, 7.3 mΩ 
N-Channel
Single
40
20
2.2
50
37
 
12
7.3
7
16
880
SO-8FL / DFN-5
  NVMFS5C466NLWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Logic Level, 40 V, 50 A, 7.3 mΩ 
N-Channel
Single
40
20
2.2
50
37
 
12
7.3
7
16
880
SO-8FL / DFN-5
 
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Standard Level, 40 V, 34 A, 12 mΩ 
N-Channel
Single
40
20
3.5
34
28
   
12
 
7.3
570
SO-8FL / DFN-5
  NVMFS5C468NT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Standard Level, 40 V, 34 A, 12 mΩ 
N-Channel
Single
40
20
3.5
34
28
   
12
 
7.3
570
SO-8FL / DFN-5
  NVMFS5C468NWFT1G  
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Product Preview     Power MOSFET, Single N-Channel, Standard Level, 40 V, 34 A, 12 mΩ 
N-Channel
Single
40
20
3.5
34
28
   
12
 
7.3
570
SO-8FL / DFN-5
 
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There are too many distinct values
to choose from in this column.
Please filter by another column first.

/
 
There are too many distinct values
to choose from in this column.
Please filter by another column first.

/
 
There are too many distinct values
to choose from in this column.
Please filter by another column first.

/
 

/
 
 
 
 

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