製品変更通知
| Change Notification # |
|
10272 |
| Revision |
|
|
| Type of Notification |
|
PRODUCT/PROCESS CHANGE NOTIFICATION |
| Change Title |
|
High Speed CMOS Conversion of ILD to BPSG |
| Issue Date |
|
2000-09-22 |
| Affected Product Family |
|
LOGIC |
| Description |
|
ON Semiconductor High Speed CMOS Logic devices, processed at Phenitec Semiconductor Inc., will convert the ILD (Interlayer Dielectric) between metal and polysilicon from 9000A, using 5.7 Wtpercent Phosphorous PSG film to 2000A NSG plus 7000A, using 3.0 Wtpercent Boron and 5.0 Wtpercent Phosphorous (BPSG film). The present thermal reflow process will remain unchanged and electrical characteristics of the die will not change. The BPSG film provides superior sidewall coverage between the metal and the polysilicon conductors over the existing PSG film. BPSG processes have been in production at multiple ON Semiconductor wafer fabrication sites since the early 1980's.Boron in the BPSG film reduces stress which provides a more conformal film than PSG. Improved reliability is achieved by reduction in cracking and metal to poly shorts. These changes to HSL products are being made as part of ON Semiconductor's continuous improvement philosophy for product quality and reliability.
|
| Key Items Affected by Change |
|
SUBCONTRACTOR FAB SITE,WAFER PROCESS |
| |
| Key Milestones |
|
| Effective Date: |
|
2000-12-29 |
| Sample Info: |
|
Contact your local ON Semiconductor Sales Office. |
| Possible Replacements |
|
N/A |
For more information on this Process Change Notification, please
contact your local ON Semiconductor sales office.
|
|