Low/Medium Voltage MOSFETs | FDD1600N10ALZD

BoostPak (NチャネルPowerTrench® MOSFET + ダイオード) 100V、6.8A、160mΩ

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CAD Model

Overview

このNチャンネルMOSFETは、優れたスイッチング性能を維持しながらオン状態抵抗を最小限に抑えるためにフェアチャイルドセミコンダクターのPowerTrench® プロセスを使用して製造されます。NPダイオードは低フォワード電圧降下と優れたスイッチング性能を備えた超高速整流器です。

  • LED TV
  • 家電製品
  • RDS(on) = 124 mΩ( 通常)@ VGS = 10 V® ID = 3.4 A
  • RDS(on) = 175 mΩ ( 通常)@ VGS = 5.0 V、 ID = 2.1 A
  • 少量のゲート電荷 (通常 2.78 nC)
  • 低Crss (通常 2.04 pF)
  • 高速スイッチング
  • 100%電子なだれテスト済み
  • 改良されたdv/dt能力
  • RoHS対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD1600N10ALZD

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Obsolete

CAD Model

Pb

A

H

P

DPAK-5

369AL

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Logic

0

with Si Diodes

0

100

124

±20

2.8

6.8

14.9

-

200

-

2.78

169

0.56

42

43

2.04

Price N/A

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