Low/Medium Voltage MOSFETs | FDMC86160

Nチャネル PowerTrench® MOSFET、100V、43A、14mΩ

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CAD Model

Overview

このNチャネルMOSFETは、オン抵抗を最小限に抑えるように特別に構成された高度なPower Trench®プロセスを使用して製造されます。このデバイスは、高性能VRM、POL、oring機能などの小さなスペースで非常に低いRDS（on）が必要なアプリケーションに最適です。

  • DC-DC商用パワーサプライ
  • 最大 rDS(on) = 14 mΩ @ VGS = 10 V、ID = 9 A
  • 最大 rDS(on) = 23 mΩ @ VGS = 6 V、ID = 7 A
  • 超低rDS(on)
    のための高パフォーマンス技術
  • 端子は鉛フリーでRoHS対応です。
  • Termination is Lead-free and RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86160

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AW

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

100

14

±20

4

43

54

-

-

-

9.8

968

3.5

45

241

11

$0.9237

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