Low/Medium Voltage MOSFETs | FDMS030N06B

N チャネル PowerTrench® MOSFET 60V、100A、3mΩ

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Overview

この N チャネル MOSFET は、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように構成された高度な PowerTrench® プロセスを使用して製造されます。

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  • その他のデータプロセッシング
  • RDS(on) = 2.4mΩ (通常) @VGS = 10V、ID = 50A
  • 低RDS(on) と高効率のための高度なパッケージとシリコンの組み合わせ
  • 高速スイッチング速度
  • 100%のUILがテスト済み
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS030N06B

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

60

3

±20

4.5

100

104

-

-

-

75

6585

14

85

1720

59

$1.4605

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