Silicon Carbide (SiC) Diodes | FFSH40120ADN

シリコンカーバイドショットキーダイオード

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SiCショットキーダイオードは、シリコンカーバイドという新しい半導体材料を使用しているため、スイッチング損失がなく、Siダイオードより優れたシステム効率を実現します。動作周波数や電力密度を向上させ、システムのサイズやコストを削減できます。 信頼性が高いため、サージ時や過電圧状態でも安定した動作を保証

  • Max Junction Temperature 175 °C
  • Avalanche Rated 200 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

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