This Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. The Schottky Rectifier is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
特長
Compact Surface Mountable Package with J-Bend leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Cathode Lead Indicated by polarity Notch
ESD Ratings, Machine Model = C, Human Body Model = 3B
Device Meets MSL 1 Requirements
Pb-Free Package is Available
AEC-Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements