MLD1N06CL: Single N-Channel Power MOSFET with Voltage Clamp

Datasheet: Self-Protected MOSFET, Logic Level
Rev. 3 (123.0kB)
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Product Overview
製品説明
The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent driver or other applications where a high in-rush current or a shorted load condition could occur.

This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and Sensefet technology for low on-resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition.

The internal Gate-Source and Gate-Drain clamps allow the device to be applied without use of external transient suppression components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.
特長
 
  • Current Limiting for short circuit protection.
  • Integrated Gate-Source clamping for ESD Protection.
アプリケーション   最終製品
  • Fuel Injector Driver
  • Incandescent Lamp Driver
 
  • Automobiles
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MLD1N06CLT4G Lifetime
Pb-free
Halide free
Single N-Channel Power MOSFET with Voltage Clamp DPAK-3 369C 1 Tape and Reel 2500 $0.5867
MLD1N06CLT4 Last Shipments
Single N-Channel Power MOSFET with Voltage Clamp DPAK-3 369C 1 Tape and Reel 2500  
面実装デバイスためのモイスチャー・レベル(260°Cリフローでの鉛フリー測定、235°Cリフローでの鉛フリー以外測定)
マーケットリードタイム(週) :
Digi-Key   (2014-10-03 00:00) : >1K
Newark   (2014-10-03 00:00) : <1K
P&S   (2014-10-03 00:00) : >1K
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