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MMDF1N05E: Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8

Datasheet: Power MOSFET, 2 A, 50 V
Rev. 11 (110.0kB)
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Product Overview
製品説明
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
特長
 
  • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive - Can Be Driven by Logic ICs
  • Miniature SO-8 Surface Mount Package - Saves Board Space
  • Diode Is Characterized for Use In Bridge Circuits
  • Diode Exhibits High Speed
  • Avalanche Energy Specified
  • Mounting Information for SO-8 Package Provided
  • IDSS Specified at Elevated Temperature
  • Pb-Free Package is Available
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MMDF1N05ER2G Last Shipments
Pb-free
Halide free
Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8 SOIC-8 751-07 1 Tape and Reel 2500  
MMDF1N05ER2 Last Shipments 
Power MOSFET 50V 2A 300 mOhm Dual N-Channel SO-8 SOIC-8 751-07 1 Tape and Reel 2500  
面実装デバイスためのモイスチャー・レベル(260°Cリフローでの鉛フリー測定、235°Cリフローでの鉛フリー以外測定)
マーケットリードタイム(週) : Contact Factory
ON Semiconductor   (2016-07-27 00:00) : 2,500
マーケットリードタイム(週) : Contact Factory
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