MOSFETs | MTD6N15

パワー MOSFET 150V 6A 300 m Ω シングル N チャネル DPAK

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CAD Model

Overview

N チャネル・エンハンスメントモード・シリコン・ゲート。この Power FET は、スイッチング・レギュレータ、コンバータ、ソレノイド、リレー・ドライバなどの高速、低損失電源スイッチング・アプリケーション向けに設計されています。

  • Silicon Gate for Fast Switching Speeds
  • Low RDS(on) 0.3 W Max
  • Rugged SOA is Power Dissipation Limited
  • Source-to-Drain Diode Characterized for Use With Inductive Loads
  • Low Drive Requirement VGS(th) = 4.0 V Max
  • Surface Mount Package on 16 mm Tape

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MTD6N15T4

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

235

REEL

2500

N

150

300

N-Channel

Single

20

4.5

6

20

-

-

-

15

1200

Price N/A

More Details

MTD6N15T4G

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

150

300

N-Channel

Single

20

4.5

6

20

-

-

-

15

1200

Price N/A

More Details

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