MOSFETs | MTD6N20E

パワー MOSFET 200V 6A 700 m Ω シングル N チャネル DPAK

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Overview

この拡張パワー MOSFET は、アバランシェおよび転流モードでの高エネルギーに対応できるように設計されています。また、エネルギー効率の良い新しい設計によりドレイン・ソース・ダイオードの回復時間が速くなります。電源、コンバータ、PWM モータ制御での低電圧、高速スイッチング・アプリケーション向けに設計されています。これらのデバイスは、ダイオード速度と安全な動作領域の整流が重要であり、予期しない電圧過渡に対し追加の安全マージンを備えるブリッジ回路に特に適しています。

  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Pb-Free Packages are Available

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MTD6N20ET4

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

235

REEL

2500

N

200

700

N-Channel

Single

20

4

6

50

-

-

-

13.7

342

Price N/A

More Details

MTD6N20ET4G

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

200

700

N-Channel

Single

20

4

6

50

-

-

-

13.7

342

Price N/A

More Details

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