パワーMOSFET/IGBTドライバ、シングル入力、ハーフブリッジ

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Overview

NCP5111は高圧電源ゲート・ドライバで、2つのNチャネル・パワーMOSFETまたはIGBTを直接駆動する出力が2つあり、ハーフブリッジ構成になっています。ブートストラップ技術を利用し、ハイ・サイド電源スイッチの適正な駆動を保証します。

  • Half Bridge Power Converters
  • High Voltage Range: Up to 600V
  • dV/dt Immunity ±50 V/ns
  • Gate Drive Supply Range from 10 V to 20 V
  • High and Low Drive Outputs
  • Output Source / Sink Current Capability 250 mA / 500 mA
  • 3.3 V and 5 V Input Logic Compatible
  • Up to Vcc Swing on Input Pins
  • Matched Propagation Delays Between Both Channels
  • One Input with Internal Fixed Dead Time (650 ns)
  • Under Vcc LockOut (UVLO) for Both Channels
  • Pin to Pin Compatible with Industry Standards

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製品:

2

共有

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Orderable Parts:

2

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Power Switch

Number of Outputs

Topology

Isolation Type

Vin Max (V)

VCC Max (V)

Rise Time (ns)

Fall Time (ns)

Drive Source Current Typ (A)

Drive Sink Current Typ (A)

Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

Delay Matching

Reference Price

NCP5111DR2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

MOSFET / IGBT

2

High-Low

Junction Isolation

600

23

85

35

0.25

0.5

750

100

60

$0.4637

More Details

NCP5111PG

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Obsolete

CAD Model

Pb

A

H

P

PDIP-8

1

260

TUBE

50

N

MOSFET / IGBT

2

High-Low

Junction Isolation

600

23

85

35

0.25

0.5

750

100

60

Price N/A

More Details

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