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NDBA180N10B: Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel

Overview
Specifications
Datasheet: Power MOSFET, 100V, 2.8mOhm, 180A, N-Channel
Rev. 4 (696kB)
Product Overview
»材料組成を表示
»No Product Change Notifications exist
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This devices is suitable for applications with low gate charge driving or ultra low on resistance requirements.
特長   利点
     
  • Ultra Low On-Resistance
 
  • Improves efficiency by reducing conduction losses
  • Low Gate Charge
 
  • Ease of drive, faster turn-on
  • High Speed Switching
 
  • Reduces dynamic power losses
  • 100% Avalanche Tested
 
  • Voltage overstress safeguard
  • Pb-Free, Halogen Free and RoHS compliance
 
  • Environment friendliness
アプリケーション   最終製品
  • Battery Protection
  • Motor Drive
  • Primary Side Switch
  • Secondary Side Synchronous Rectification
 
  • Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
  • Other Motor
  • Power Supply
供給状況 & サンプル
製品
状態
Compliance
内容
外形
MSL*
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
数量
NDBA180N10BT4H Active
Pb-free
Halide free
Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel D2PAK-3 418AJ 1 Tape and Reel 800 $1.756
面実装デバイスためのモイスチャー・レベル(260°Cリフローでの鉛フリー測定、235°Cリフローでの鉛フリー以外測定)
マーケットリードタイム(週) : 8 to 12
Arrow   (Sat Feb 18 00:00:45 MST 2017) : 600
Mouser   (2017-02-16) : <1K
ON Semiconductor   (2017-02-15) : 2,793
Datasheet: Power MOSFET, 100V, 2.8mOhm, 180A, N-Channel
Rev. 4 (696kB)
Product Overview
»材料組成を表示
»No Product Change Notifications exist

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) RDS(on) Max @ VGS = 2.5 V (mΩ) RDS(on) Max @ VGS = 4.5 V (mΩ) RDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
Pb-free
Halide free
 Active     Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel 
N-Channel
Single
100
20
4
180
200
   
3
 
95
 
580
6950
3000
15
D2PAK-3
Datasheet: Power MOSFET, 100V, 2.8mOhm, 180A, N-Channel
Rev. 4 (696kB)
Product Overview
»材料組成を表示
»No Product Change Notifications exist
Case Outline
418AJ   
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