IGBT 600V 45A Welding

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.

  • Inverter Welding
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Low Gate Charge
  • Soft, Fast Free Wheeling Diode

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB45N60SWG

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Obsolete

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

600

45

2.2

1.1

0.55

-

376

22

134

-

-

250

Yes

Price N/A

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