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NVTFS4C05N: Power MOSFET 30V, 102A, 3.6 mOhm, Single N-Channel, u8FL, Logic Level.

Overview
Specifications
Datasheet: Single N-Channel Power MOSFET, 30 V, 3.6 mOhm, 102 A
Rev. 2 (79kB)
»材料組成を表示
»No Product Change Notifications exist
Product Overview
製品説明
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特長   利点
     
  • Low on-resistance
 
  • minimizes conduction losses
  • Low gate charge
 
  • minimizes switching losses
  • u8FL package
 
  • very small footprint enabling smaller PCBs and modules
  • AEC-Q101 Qualified
 
  • suitable for automotive applications
アプリケーション   最終製品
  • Reverse battery protection
  • DC-DC converter output driver
 
  • HID and LED lighting
  • Infotainment Power Supplies
技術資料 & デザイン・リソース
デザインおよび開発ツール (1) データシート (1)
アプリケーション ノート (1) パッケージ図 (1)
シミュレーション・モデル (4)  
供給状況 & サンプル
製品
状態
Compliance
内容
外形
MSL*
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
数量
NVTFS4C05NTAG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 30V, 102A, 3.6 mOhm, Single N-Channel, u8FL, Logic Level., 1500 / Tape & Reel u8FL / WDFN-8 511AB 1 Tape and Reel 1500 $0.314
NVTFS4C05NWFTAG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 30V, 102A, 3.6 mOhm, Single N-Channel, u8FL, Logic Level., 1500 / Tape & Reel. Pb-Free, Wettable Flanks u8FL / WDFN-8 511AB 1 Tape and Reel 1500 $0.329
面実装デバイスためのモイスチャー・レベル(260°Cリフローでの鉛フリー測定、235°Cリフローでの鉛フリー以外測定)
マーケットリードタイム(週) : Contact Factory
Mouser   (2016-07-26 00:00) : >1K
マーケットリードタイム(週) : Contact Factory
ON Semiconductor   (2016-07-23 00:00) : 28,500
Datasheet: Single N-Channel Power MOSFET, 30 V, 3.6 mOhm, 102 A
Rev. 2 (79kB)
»材料組成を表示
»No Product Change Notifications exist
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 30V, 102A, 3.6 mOhm, Single N-Channel, u8FL, Logic Level., 1500 / Tape & Reel 
N-Channel
Single
30
20
2.2
102
72
 
5.1
3.6
14.5
31
5.5
34.4
1968
1224
71
u8FL / WDFN-8
AEC Qualified
PPAP Capable
Pb-free
Halide free
 Active     Power MOSFET 30V, 102A, 3.6 mOhm, Single N-Channel, u8FL, Logic Level., 1500 / Tape & Reel. Pb-Free, Wettable Flanks 
N-Channel
Single
30
20
2.2
102
72
 
5.1
3.6
14.5
31
5.5
34.4
1968
1224
71
u8FL / WDFN-8
Datasheet: Single N-Channel Power MOSFET, 30 V, 3.6 mOhm, 102 A
Rev. 2 (79kB)
»材料組成を表示
»No Product Change Notifications exist
Product Overview
Case Outline
511AB   
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