MOSFETs | FDC6327C

デュアルN&Pチャネル PowerTrench® MOSFET、2.5V仕様

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CAD Model

CAD Model

Overview

これらN&Pチャネル2.5V仕様MOSFETは、優れたスイッチング性能のために低デート電荷を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrenchプロセスを使用して製造されます。これらのデバイスは、より大規模、より高価なSO-8およびTSSOP-8パッケージが実用的でないアプリケーション向けに、非常に小さなフットプリントで並外れた消費電力を提供するように設計されています。

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  • Nチャンネル2.7A、20V RDS(on)=0.08Ω @VGS=4.5V、RDS(on)=0.12Ω @VGS=2.5V Pチャンネル -1.6A、-20V.RDS(on)=0.17Ω @VGS= -4.5V、RDS(on)=0.25Ω @V GS=-2.5V
  • P-Channel
     -1.6A, -20V
     RDS(on) = 0.17Ω @ VGS = -4.5V
     RDS(on) = 0.25Ω @ VGS = -2.5V
  • 高速スイッチング速度。
  • 少量のゲート電荷。
  • 特に低いRDS(ON)に対する高性能トレンチ技術。
  • SuperSOT™ -6 パッケージ: 小型(標準SO-8より72％小さい)、薄型(厚さ 1mm)

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6327C

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

±20

-

Complementary

Dual

8

±1.5

N:2.7 , P: -1.6

0.96

N:120, P:250

N: 80, P: 170

3.7

2.85

315

$0.1629

More Details

FDC6327C-F169

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Obsolete

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

20

250

Complementary

Dual

-

8

-1.9

0.96

N:120 P:250

N: 80, P: 170

-

-

325

Price N/A

More Details

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