MOSFETs | MVB50P03HDL

シングル P チャネル、ロジックレベル、パワー MOSFET、-30V、-50A、25mΩ

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Overview

車載用パワー MOSFET は、アバランシェおよび転流モードでの高エネルギーに対応できるように設計されています。また、エネルギー効率の良い設計によりドレイン・ソース・ダイオードの回復時間が速くなります。電源、コンバータ、PWM モータ制御での低電圧、高速スイッチング・アプリケーション向けに設計されています。これらのデバイスは、ダイオード速度と安全な動作領域の整流が重要であり、予期しない電圧過渡に対し追加の安全マージンを備えるブリッジ回路に特に適しています。AEC-Q101 認定済みの MOSFET で PPAP に対応しており、車載アプリケーションに適しています。

  • Power Supplies
  • Motor Control
  • Bridge Circuits
  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Short Heatsink Tab Manufactured Not Sheared
  • Specially Designed Leadframe for Maximum Power Dissipation
  • These Devices are Pb−Free and are RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MVB50P03HDLT4G

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418B-04

1

260

REEL

800

N

-30

-

P-Channel

Single

15

2

50

125

-

25

-

74

3500

Price N/A

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