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Product Overview

I2T100: 0.7 µm Process Technology

Product Description
The Intelligent Interface Technology (I2T100) process from ON Semiconductor offers 100 V capability in a 0.7 µm CMOS mixed-signal technology. A variety of devices and process options provide a high degree of flexibility in combining mixed analog/digital with low-, medium- and high-voltage circuitry.
Features

  • 2-3 metal layers
  • Floating NMOS and PMOS transistors
  • Low threshold PMOS transistor
  • Medium- and high-voltage NDMOS transistors
  • Floating medium- and high-voltage NDMOS and PDMOS transistors
  • Low-, medium- and high-voltage bipolar transistors
  • Zener zap diode for OTP
  • Medium- and high-resistivity polysilicon resistors
  • Medium- and high-voltage floating capacitors
  • Deep N+ doped guard rings
  • Optional EEPROM
  • High temperature capability

Process Characteristics

Operating Voltage 5.0 V
Substrate Material P-sub, twin-well
Drawn Transistor Length 0.7 µm
Gate Oxide Thickness 17.0/42.0 nm
Contact/Via Size 0.8 µm
Contacted Gate Pitch 2.8 µm
Top Metal Thickness 900 nm
Contacted Metal Pitch
   Metal 1 (contact/via) 2.8/2.6 µm
   Metal 2 (via 1/via 2) 3.0/3.6 µm
   Metal 3 (via 2) 4.0 µm
Metal Composition Al/Si/Cu
Isolation LOCOS
ILD Planarization BPSG
IMD Planarization PECVD/SOG

Sample Process Options

  Mask Layers
2 metal, NSINKER, HIPO, CAPA, LowVt pMOS 22
3 metal, NSINKER, HIPO, CAPA, LowVt pMOS 24

Device Characteristics

(All Values Typical at 25°C)

Low-Voltage Transistors

NMOS Transistor Typical
Value		 Unit
Vt (20/0.7, linear extrapolated) 0.74 V
Vmax=Vbd 5.5 V
Ids (20/0.7, Vds=Vgs= 5 V) 358 µA/µm
PMOS Transistor
Vt (20/0.7, linear extrapolated) -0.95 V
Vmax=Vbd 5.5 V
Ids (20/0.7, Vds=Vgs= 5 V) -176 µA/µm
Low Vt PMOS Transistor
Vt (20/1.2, linear extrapolated) -0.78 V
Vmax=Vbd 5.5 V
Ids (20/1.2, Vds=Vgs= 5 V) -121 µA/µm

Bipolar Transistors

NPN Floating @ 100 V Ae=5 µm² Area=3529 µm² Typical
Value		 Unit
Hfe 60 -
Bvceo @ Ie=1 µA 25 V
Bvces min 60 V
Imax@142°C 0.3 mA
NPN Floating @ 100 V Ae= 49 µm² Area=4490 µm²
Hfe 40 -
Bvceo @ Ie=1 µA 25 V
Bvces min 60 V
Imax@142°C 2.7 mA
NPN Floating @ 60 V Ae= 5 µm² Area=1352 µm²
Hfe 58 -
Bvceo @ Ie=1 µA 25 V
Bvces min 60 V
Imax@142°C 0.96 mA
NPN Floating @ 60 V Ae= 19 µm² Area=3081 µm²
Hfe 45 -
Bvceo @ Ie=1 µA 25 V
Bvces min 25 V
Imax 1.2 mA
Substrate PNP Ae= 460 µm² Area=2289 µm², collector grounded
Hfe 22 -
Bvceo @ Ie=1 µA 30 V
Vbe 0.57 V
PNP Floating @ 100 V Area=1542 µm²
Hfe 700 -
Bvceo @ Ie=1 µA 5.5 V
Bvces min 5.5 V
Imax@142°C 0.3 mA
PNP Area=5139 µm²
Hfe 800 -
Bvceo @ Ie=1 µA 25 V
Bvces min 40 V
Imax@142°C 0.3 mA
PNP Area=98354 µm²
Hfe 880 -
Bvceo @ Ie=1 µA 25 V
Bvces min 80 V
Imax@142°C 0.3 mA

Diodes

Poly Diode Parameter, W=2.2 µm Typical
Value		 Unit
BV 6.76 V
Imax (2.2 µm) ~300 µA
Ileak (2.2 µm) @-5 V ~90 µA
90 V Floating HV Diode Area=6432 µm²
BV 90 V
Isub/Ia (Ia=2.4 mA) ~2 %
Zener diode
Smallest diode (3784 µm²)
BV 9.5 V
Ron in Vbd mode 1560 Ω

Capacitors (Parameter @ 25°C)

Poly/Thin GateOx/N++ [CAPA] Typical
Value		 Unit
Cplate 0.75 fF/µm²
Vbd_max (full lifetime) 15 V
Poly/Poly (medium voltage floating)
Cplate 0.36 fF/µm²
Vbd_max (full lifetime) 30 V
Metal1/Poly/Metal2 (high voltage floating)
Cplate 0.075 fF/µm²
Vbd_max (full lifetime) 100 V

Resistors

Resistor Type Typical
Value		 Unit
High-Resistance Poly [HIPO] 1825 Ω/square
Medium-Resistance Poly [MOPO] 190 Ω/square
Low-Resistance Poly [LOPO] 27 Ω/square
N-Well 1000 Ω/square
Pbody Diffusion in Ntub 1250 Ω/square
N+ Diffusion in P-well 67.5 Ω/square
P+ Diffusion in N-well 96 Ω/square


 

High-Voltage Transistors

Floating NMOS Transistor @ 100 V Typical
Value		 Unit
Vt (20/0.7, linear extrapolated) 0.74 V
Vmax=Vfloat to P-substrate 100 V
Vgsmax= Vbdmax 5.5 V
Ids (20/0.7, Vd=Vg= 5 V) 358 µA/µm
Floating PMOS Transistor @ 100 V
Vt (25/0.7, linear extrapolated) -1.1 V
Vmax=Vfloat to P-substrate 100 V
Vgsmax= Vbdmax -5.5 V
Ids (25/0.7, Vd=Vg= 5 V) -160 µA/µm
100 V NDMOS
Vt (W=40) 1 V
Vmax=Vbd 100 V
Vgsmax (full lifetime) 12 V
IDS (40/4, Vds=40 V, Vgs=4.0 V) 1210 µA
Ron*W 74 kΩ*µm
Ron*Area 1532 mΩ*mm²
30 V NDMOS (Thin Ox)
Vt (W=40) 0.67 V
Vmax=Vbd 30 V
Vgsmax (full lifetime) 5.5 V
IDS (40/4, Vds20V, Vgs=5.0 V) 4675 µA
Ron*W 31.8 kΩ*µm
Ron*Area 372 mΩ*mm²
30 V NDMOS (Thick Ox)
Vt (W=40) 1.03 V
Vmax=Vbd 30 V
Vgsmax (full lifetime) 12 V
IIDS (40/4, Vds=15 V, Vgs=4.0 V) 1450 µA/µm
Ron*W 22 kΩ*µm
Ron*Area 257 mΩ*mm²
100 V Self-Aligned Floating NDMOS
Vt (W=40) 2.43 V
Vmax=Vbd 95 V
Vgsmax (full lifetime) 12 V
IDS (40/1.2, Vds=40 V, Vgs=5.0 V) 2050 µA/µm
Ron*W 33 kΩ*µm
Ron*Area 488 mΩ*mm²
60 V Self-Aligned Floating NDMOS
Vt (W=40) 2.4 V
Vmax=Vbd 60 V
Vgsmax (full lifetime) 12 V
IDS (40/1.2, Vds=40 V, Vgs=5.0 V) 2250 µA/µm
Ron*W 17.6 kΩ*µm
Ron*Area 153 mΩ*mm²
40 V Self-Aligned Floating NDMOS
Vt (W=40) 2.43 V
Vmax=Vbd 40 V
Vgsmax (full lifetime) 12 V
IDS (40/1.2, Vds=25 V, Vgs=5.0 V) 2200 µA/µm
Ron*W 11.6 kΩ*µm
Ron*Area 87 mΩ*mm²
90 V PDMOS
Vt (W=40) -1.13 V
Vmax=Vbd -100 V
|Vgsmax| (full lifetime) 12 V
IDS (40/4, Vds=-40 V, Vgs=-4.0 V) 980 µA/µm
Ron*W 77 kΩ*µm
Ron*Area 1050 mΩ*mm²
75 V PDMOS
Vt (W=40) -1.13 V
Vmax=Vbd -75 V
|Vgsmax| (full lifetime) 12 V
IDS (40/3.4, Vds=-40 V, Vgs=-4.0 V) 1125 µA/µm
Ron*W 59 kΩ*µm
Ron*Area 596 mΩ*mm²
40 V PDMOS
Vt (W=40) -1.13 V
Vmax=Vbd -40 V
|Vgsmax| (full lifetime) 12 V
IDS (40/3.2, Vds=-25 V, Vgs=-4.0 V) 1175 µA/µm
Ron*W 45 kΩ*µm
Ron*Area 380 mΩ*mm²
100 V Depleted PDMOS
Vmax=Vbd -100 V
|Vgsmax| (full lifetime) 5.5 V
IDS (40/3, Vds=-40 V, Vgs=0 V) 180 µA/µm
60 V Power-Kit NDMOS (optimized for switching applications)
Vt (W=40) 2.45 V
Vmax=Vbd 60 V
Vgsmax (full lifetime) 12 V
IDS (40/1.2, Vds=25 V, Vgs=5.0 V) 2200 µA/µm
Ron*W 18 kΩ*µm
Ron*Area 115 mΩ*mm²
40 V Power-Kit NDMOS (optimized for switching applications)
Vt (W=40) 2.45 V
Vmax=Vbd 40 V
Vgsmax (full lifetime) 12 V
IDS (40/1.2, Vds=25 V, Vgs=5.0 V) 2350 µA/µm
Ron*W 11.3 kΩ*µm
Ron*Area 65 mΩ*mm²

Libraries

Digital Design
Standard Cell Core Library
pn sum: 5.7 µm
Area of 2-input nand (na21): 207 µm²
Gate density (na21 @ 100% utilization): 4.831 k gates/mm²
Scan Flop density (scan flops @ 100% utilization): 0.5574 k ff/mm²
Average power (@ 5.0 V): 2.32 µW/MHz/gate

CAD Tool Compatibility

Digital Design
Synopsys Design Compiler
Cadence Verilog

Analog Design
Cadence DFII (4.4.6)
Spectre

Place and Route
Synopsys Apollo
Cadence Silicon Ensemble

Physical Verification
Mentor Calibre

For more information please contact your local sales support at www.onsemi.com