MOSFETs | FDZ193P

P チャネル 1.7V PowerTrench® WL-CSP MOSFET -20V、-1A、90mΩ

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Overview

最先端の「低ピッチ」WLCSP パッケージングプロセスを備えた高度な 1.7V PowerTrench プロセスで設計された FDZ193P は、PCB スペースおよび rDS(on) の両方を最小限に抑えます。この高度な WLCSP MOSFET はパッケージング技術の進歩を体現し、これにより、デバイスでの優れた熱伝達特性、超ロープロファイルのパッケージング、低ゲート電荷、および低 rDS(on) の組み合わせを実現しました。

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  • Battery Management
  • Load Switch
  • Battery Protection
  • 最大 rDS(on) = 90mΩ @ VGS = -4.5V、ID = -1A
  • 最大 rDS(on) = 130mΩ @ VGS = -2.5V、ID = -1A
  • 最大 rDS(on) = 300mΩ @ VGS = -1.7V、ID = -1A
  • わずか1.5mm² の基板面積を占め、2x2 BGAの50％未満です
  • 超薄型パッケージ: PCBにマウント時、高さは0.65 mm未満
  • RoHS対応

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

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FDZ193P

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Obsolete

CAD Model

Pb

A

H

P

WLCSP-6

567PW

1

260

REEL

5000

N

-20

90

P-Channel

Single

12

-1.5

-1

1.9

130

90

12

7

660

Price N/A

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