NDBA180N10B: Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel
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製品説明
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This devices is suitable for applications with low gate charge driving or ultra low on resistance requirements.
特長
利点
Improves efficiency by reducing conduction losses
Ease of drive, faster turn-on
Reduces dynamic power losses
Voltage overstress safeguard
Pb-Free, Halogen Free and RoHS Compliance
アプリケーション
最終製品
Battery Protection
Motor Drive
Primary Side Switch
Secondary Side Synchronous Rectification
Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
Other Motor
Power Supply
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»材料組成を表示
»No Product Change Notifications exist
Case Outline
418AJ
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新製品
NTP8G202N
:
600 V, 290 mΩ, 単一Nチャネル, パワーGaN カスコードトランジスタ
NDBA180N10B
NDPL180N10B
:
100 V, 180 A , Nチャネル・パワーMOSFET
低オン抵抗(2.8 mΩ)
低ゲート負荷(95 nC) 及び高速スイッチング
D2PAK 及びTO-220のパッケージに対応