General Purpose and Low VCE(sat) Transistors | NSS60101DMT

デュアル 60V 1A 低 VCE(sat) NPN トランジスタ、WDFN6 で提供

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オン・セミコンダクターの低 VCE(sat) トランジスタの e2PowerEdge ファミリは、超低飽和電圧 VCE(sat) および高電流ゲイン機能を備えた小型の表面実装デバイスで、小さなフォーム・ファクタの 2x2mm プラスチック・リードレス・パッケージで提供されます。これらは、手頃な価格の効率的なエネルギー制御が重要な、低電圧、高速スイッチング・アプリケーションで使用するために設計されています。 自動車産業では、エアバッグの展開や計器クラスターで使用できます。高電流ゲインにより、e2PowerEdge デバイスを PMU の制御出力から直接駆動でき、リニア・ゲイン (ベータ) によりアナログ・アンプの理想的なコンポーネントになります。

  • Low Side Switching
  • Amplification
  • Automotive Transmission Control Unit
  • Automotive Engine Control Unit
  • Automotive Infotainment
  • 1A IDC, 2A ICM
  • Low VCE(sat): 0.115V @ 1A IC, IC/IB= 10
  • NSV60101DMTWTBG - Wettable Flanks Packaged Device
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • Beta of 180 @ 1ADC, VCE = 2V

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS60101DMTTBG

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Active

CAD Model

Pb

A

H

P

WDFN-6

506AN

1

260

REEL

3000

Y

Dual NPN

Low VCE(sat)

0.18

1

60

60

6

1.1

0.9

90

-

180

2.27

$0.1933

More Details

NSV60101DMTWTBG

Loading...

Active

CAD Model

Pb

A

H

P

WDFN-6

506AN

1

260

REEL

3000

Y

Dual NPN

Low VCE(sat)

0.18

1

60

60

6

1.1

0.9

90

-

180

2.27

$0.2133

More Details

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