Single P-Channel Power MOSFET and Schottky Diode -20V -3.9A 140mΩ

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Overview

Power MOSFET and Schottky Diode−20 V, −3.9 A FETKY®, P−Channel,2.0 A Schottky Barrier Diode, DFN6

  • Buck Converter
  • High Side DC-DC Conversion Circuits
  • Power Management in Portable, HDD and Computing
  • Flat Lead 6 Terminal Package 3x3x1
  • Enhanced Thermal Characteristics
  • Low VF and Low Leakage Schottky Diode
  • Reduced Gate Charge to Improve Switching Response

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製品:

2

共有

Product Groups:

Orderable Parts:

2

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTLGF3402PT1G

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Obsolete

CAD Model

Pb

A

H

P

DFN-6

1

250

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Logic

0

with Schottky Diode

0

-20

-

12

-2

-3.9

1.5

225

140

3.7

3.8

230

1.6

37

105

40

Price N/A

More Details

NTLGF3402PT2G

Loading...

Obsolete

CAD Model

Pb

A

H

P

DFN-6

1

250

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Low-Medium Voltage

Logic

0

with Schottky Diode

0

-20

-

12

-2

-3.9

1.5

225

140

3.7

3.8

230

1.6

37

105

40

Price N/A

More Details

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