NVTFS5811NL: Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.
»材料組成を表示
»No Product Change Notifications exist
製品説明
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特長
利点
Minimal conduction losses
Safeguards agains voltage overstress failures
»材料組成を表示
»No Product Change Notifications exist
NVTFS5811NLTAG
AEC Qualified
PPAP Capable
Pb-free
Halide free
Active
Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.
N-Channel
Single
40
20
2.2
40
21
10
6.7
17
30
9
17
1570
215
157
u8FL / WDFN-8
NVTFS5811NLTWG
AEC Qualified
PPAP Capable
Pb-free
Halide free
Active
Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.
N-Channel
Single
40
20
2.2
40
21
10
6.7
17
30
9
17
1570
215
157
u8FL / WDFN-8
NVTFS5811NLWFTAG
AEC Qualified
PPAP Capable
Pb-free
Halide free
Active
Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.
N-Channel
Single
40
20
2.2
40
21
10
6.7
17
30
9
17
1570
215
157
u8FL / WDFN-8
NVTFS5811NLWFTWG
AEC Qualified
PPAP Capable
Pb-free
Halide free
Active
Power MOSFET 40V, 40A, 6.7 mOhm, Single N-Channel, u8FL, Logic Level.
N-Channel
Single
40
20
2.2
40
21
10
6.7
17
30
9
17
1570
215
157
u8FL / WDFN-8
»材料組成を表示
»No Product Change Notifications exist
Case Outline
511AB
パッケージ
»材料組成を表示
»No Product Change Notifications exist
新製品
NDBA100N10B
NDPL100N10B
:
100 V, 100 A , Nチャネル・パワーMOSFET
低オン抵抗(6.9 mΩ)
低ゲート負荷(35 nC) 及び高速スイッチング
D2PAK 及びTO-220のパッケージに対応
NTP8G206N
:
600 V, 150 mΩ, 単一Nチャネル, パワー GaN カスコードトランジスタ