Darlington Transistors | 2N6040

8.0 A、60 V PNP ダーリントン・バイポーラ・パワートランジスタ

Obsolete

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Overview

この 8 A、100 V NPN ダーリントン・バイポーラ・パワートランジスタは汎用アンプや低速スイッチングアプリケーション向けに設計されています。2N6040/2N6042 (PNP)、および 2N6043/2N6045 (NPN) は相補型デバイスです。

  • High DC Current Gain -
    hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc -
    VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
    VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044
    VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44
    VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages are Available

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IC Continuous (A)

V(BR)CEO Min (V)

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hFE Max (k)

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2N6040G

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Obsolete

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Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

8

60

2

1

20

4

Price N/A

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信頼性データ

Die Related Summary Data

Device: 2N6040G

Equivalent to wafer fab process: BPT

製品技術

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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