Darlington Transistors | 2N6052

12 A、100 V PNP ダーリントン・バイポーラ・パワートランジスタ

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Overview

このバイポーラ・パワー PNP ダーリントン・トランジスタは、汎用アンプおよび低周波スイッチングアプリケーション向けに設計されています。

  • High DC Current Gain
    hFE = 3500 (Typ) @ IC = 5.0 Adc
  • Collector-Emitter Sustaining Voltage— @ 100 mA
    VCEO(sus) = 80 Vdc (Min)—2N6058
    100 Vdc (Min)—2N6052, 2N6059
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • This is a Pb-Free Device

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

2N6052G

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Obsolete

CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

PNP

12

100

2

0.75

18

4

Price N/A

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