Darlington Transistors | 2N6052

12 A、100 V PNP ダーリントン・バイポーラ・パワートランジスタ

Obsolete

Datasheet

購入

Overview

このバイポーラ・パワー PNP ダーリントン・トランジスタは、汎用アンプおよび低周波スイッチングアプリケーション向けに設計されています。

  • High DC Current Gain
    hFE = 3500 (Typ) @ IC = 5.0 Adc
  • Collector-Emitter Sustaining Voltage— @ 100 mA
    VCEO(sus) = 80 Vdc (Min)—2N6058
    100 Vdc (Min)—2N6052, 2N6059
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • This is a Pb-Free Device

Tools and Resources

Product services, tools and other useful resources related to 2N6052

CAD Model

CAD Model

材料組成

製品変更通知

信頼性

Buy/Parametrics Table

検索

Close Search

製品:

1

共有

並べ替え

Product Groups:

┗

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

2N6052G

Loading...

Obsolete

CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

PNP

12

100

2

0.75

18

4

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.

信頼性データ

Die Related Summary Data

Device: 2N6052G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

新しい検索