Darlington Transistors | BDX34B

10 A、80 V PNP ダーリントン・バイポーラ・パワートランジスタ

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Overview

この 10 A、100 V PNP ダーリントン・バイポーラ・パワートランジスタは、汎用アプリケーションや低速スイッチングアプリケーション向けに設計されています。BDX33B、BDX33C、BDX34B、および BDX34C は相補型デバイスです。

  • High DC Current Gain -
    hFE = 2500 (typ.) at IC = 4.0
  • Collector-Emitter Sustaining Voltage at 100 mAdc
    VCEO(sus) = 80 Vdc (min.) BDX33B, 34B
    VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
  • Low Collector-Emitter Saturation Voltage
    CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
  • Monolithic Construction with Build-In Base-Emitter Shunt resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

BDX34B

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

10

80

2.5

0.75

-

-

Price N/A

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BDX34BG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

10

80

2.5

0.75

-

-

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: BDX34BG

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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