Darlington Transistors | BDW93C

NPN エピタキシャルシリコントランジスター

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Overview

NPN Epitaxial Silicon Darlington Bipolar Transistor

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  • High current applications

  • パワーダーリントンTR
  • BDW23、BDW23A、BDW23BおよびBDW23Cをそれぞれ補完、ハンマードライバー、自動アンプ用途

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IC Continuous (A)

V(BR)CEO Min (V)

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BDW93C

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Obsolete

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Pb

A

H

P

TO-220-3

340AT

NA

0

BLKBG

1200

N

NPN

12

100

2 V

0.75

20

-

Price N/A

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BDW93CTU

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

12

100

2 V

0.75

20

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: BDW93C

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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