Darlington Transistors | KSP13

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Overview

500 mA, 30 V NPN Darlington Bipolar Junction Transistor

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  • コレクター-エミッター間電圧: VCEO = 30V
  • コレクター電力消費： PC (最大) = 625mW
  • High Gain Devices
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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Product services, tools and other useful resources related to KSP13

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

KSP13BU

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CAD Model

Pb

A

H

P

TO-92-3

135AN

NA

0

BLKBG

10000

Y

NPN

0.5

30

1.5

10

-

125

$0.0487

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KSP13TA

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CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

Y

NPN

0.5

30

1.5

10

-

125

$0.0485

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信頼性データ

Die Related Summary Data

Device: KSP13BU

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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