NPN エピタキシャルシリコン ダーリントントランジスター

Overview

500 mA, 30 V NPN Darlington Bipolar Junction Transistor

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  • コレクター-エミッター間電圧: VCEO = 30V
  • コレクター電力消費: PC (最大) = 625mW
  • High Gain Devices
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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製品:

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2

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

KSP13BU

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Active

CAD Model

Pb

A

H

P

TO-92-3

NA

0

BLKBG

10000

Y

NPN

0.5

30

1.5

10

-

125

$0.0487

More Details

KSP13TA

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Active

CAD Model

Pb

A

H

P

TO-92-3 LF

NA

0

FNFLD

2000

Y

NPN

0.5

30

1.5

10

-

125

$0.0485

More Details

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