Darlington Transistors | MJ11015

30 A、120 V PNP ダーリントン・バイポーラ・パワートランジスタ

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Overview

この NPN ダーリントン・バイポーラ・パワートランジスタは、相補型汎用アンプのアプリケーションで、出力デバイスとして使用できます。MJ11015 (PNP) および MJ11012 および MJ11016 (NPN) は相補型デバイスです。

  • High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistor
  • Junction Temperature to +200°C

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IC Continuous (A)

V(BR)CEO Min (V)

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MJ11015G

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Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

Y

PNP

30

120

3

1

-

4

$4.6174

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Die Related Summary Data

Device: MJ11015G

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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