Darlington Transistors | MJ11028

50 A、60 V NPN ダーリントン・バイポーラ・パワートランジスタ

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Overview

このバイポーラ・パワー・ダーリントン・トランジスタは、相補型汎用アンプのアプリケーションで、出力デバイスとして使用できます。

  • High DC Current Gain -
    hFE = 1000 (Min) @ IC = 25 Adc
    hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to +200°C
  • Pb-Free Packages are Available

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MSL Temp (°C)

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Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

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hFE Max (k)

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MJ11028G

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Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

Yes

NPN

50

60

2.5

1

18

-

38.86 x 25.91 x 7.43

$12.133

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Die Related Summary Data

Device: MJ11028G

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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