Darlington Transistors | MJE800

4.0 A、60 V NPN ダーリントン・バイポーラ・パワートランジスタ

Obsolete

Datasheet

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Overview

ダーリントン・バイポーラ・パワートランジスタは汎用アンプや低速スイッチングアプリケーション向けに設計されています。MJE700、MJE702、MJE703 (PNP) および MJE800、MJE802、MJE803 (NPN) は相補型デバイスです。

  • High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
  • Choice of Packages -
    MJE700 and MJE800 series
  • Pb-Free Packages are Available

Tools and Resources

Product services, tools and other useful resources related to MJE800

CAD Model

CAD Model

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

MJE800

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

4

60

2.5

0.75

-

-

Price N/A

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MJE800G

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

4

60

2.5

0.75

-

-

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: MJE800G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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