Darlington Transistors | TIP107

8.0 A、100 V PNP ダーリントン・バイポーラ・パワートランジスタ

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Overview

このダーリントン・バイポーラ・パワートランジスタは汎用アンプや低速スイッチングアプリケーション向けに設計されています。TIP100/TIP101/TIP102 (NPN)、TIP105/TIP106/TIP107 (PNP) は相補型デバイスです。

  • High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 mAdc
  • Collector-Emitter Sustaining Voltage--@ 30 mAdc
    VCEO(sus) = 60 Vdc (Min)-TIP100, TIP105
    VCEO(sus) = 80 Vdc (Min)-TIP101, TIP106
    VCEO(sus) = 100 Vdc (Min)-TIP102, TIP107
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc
    VCE(sat)= 2.5 Vdc (Max) @ IC= 8.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220 AB Compact Package
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

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TIP107G

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

8

100

2

1

20

4

$0.4307

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Die Related Summary Data

Device: TIP107G

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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