NPN エピタキシャルシリコン ダーリントントランジスター

Obsolete

Overview

10 A, 100 V NPN Epitaxial Darlington Power Bipolar Junction Transistor. 

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  • 内蔵ベースエミッター間シャント抵抗器付きのモノリシック構造
  • 高DC電流利得: hFE=1000 @ VCE= 4 V、 IC= 5 A (最小)
  • 産業用途・TIP145T/146T/147Tを補完
  • Complement to TIP145T/146T/147T

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製品:

2

共有

Product Groups:

Orderable Parts:

2

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

TIP142T

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

BLKBG

1200

N

NPN

10

100

2

1

~NA~

~NA~

Price N/A

More Details

TIP142TTU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

NPN

10

100

2

1

~NA~

~NA~

Price N/A

More Details

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