Darlington Transistors | TIP142T

NPN エピタキシャルシリコン ダーリントントランジスター

Obsolete

Datasheet

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Overview

10 A, 100 V NPN Epitaxial Darlington Power Bipolar Junction Transistor. 

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  • 内蔵ベースエミッター間シャント抵抗器付きのモノリシック構造
  • 高DC電流利得: hFE=1000 @ VCE= 4 V、 IC= 5 A (最小)
  • 産業用途・TIP145T/146T/147Tを補完
  • Complement to TIP145T/146T/147T

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製品:

2

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Orderable Parts:

2

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

TIP142T

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

BLKBG

1200

N

NPN

10

100

2

1

~NA~

~NA~

Price N/A

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TIP142TTU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

10

100

2

1

~NA~

~NA~

Price N/A

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信頼性データ

Die Related Summary Data

Device: TIP142TTU

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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