Digital Transistors (BRTs) | FJN3301R

エピタキシャル・シリコン・トランジスタ

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内蔵抵抗があるトランジスタは、コンポーネント数を削減し、回路設計を簡素化することにより、スペースとコストを節約する優れたソリューションとなります。

  • 100 mA 出力電流能力
  • 内蔵バイアス抵抗 (R1 = 4.7 KΩ、R2 = 4.7 KΩ)

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IC Continuous (A)

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FJN3301RTA

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Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

NPN

0.1

50

20

4.7

4.7

1

0.5

3

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