Digital Transistors (BRTs) | FJN3302R

バイアス抵抗付き NPN エピタキシャル・シリコン・トランジスタ

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Overview

内蔵抵抗があるトランジスタは、コンポーネント数を削減し、回路設計を簡素化することにより、スペースとコストを節約する優れたソリューションとなります。

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  • 100 mA 出力電流能力
  • 内蔵バイアスレジスタ (R1=10KΩ、R2=10KΩ)

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IC Continuous (A)

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FJN3302RTA

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Obsolete

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Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

NPN

0.1

50

30

10

10

1

0.5

3

Price N/A

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信頼性データ

Die Related Summary Data

Device: FJN3302RTA

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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