Digital Transistors (BRTs) | FJN4305R

バイアス抵抗付き PNP エピタキシャル・シリコン・トランジスタ

Obsolete

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Overview

内蔵抵抗があるトランジスタは、コンポーネント数を削減し、回路設計を簡素化することにより、スペースとコストを節約する優れたソリューションとなります。

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  • 100 mA 出力電流能力
  • 内蔵バイアス抵抗 (R1=4.7K。R2=10KΩ)

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Polarity

IC Continuous (A)

V(BR)CEO Min (V)

hFE Min

R1 (kΩ)

R2 (kΩ)

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Vi(off) Max (V)

Vi(on) Min (V)

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FJN4305RTA

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Obsolete

CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

PNP

0.1

50

30

4.7

10

0.47

-0.3

-2.5

Price N/A

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信頼性データ

Die Related Summary Data

Device: FJN4305RTA

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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