Digital Transistors (BRTs) | FJV4102R

PNPエピタキシャルシリコントランジスター、バイアス抵抗内蔵

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抵抗内蔵トランジスターは、部品数を減らし回路設計を簡素化することで、優れた省スペース、省コストソリューションを実現します。

  • ă�“ă�®čŁ˝ĺ“�ă�Żĺ¤šć§�ă�Şç”¨é€”ă�«é�©ă�—ă�źć±Žç”¨ĺ“�ă�§ă�™ă€‚
  • 100 mA 出力電流能力
  • 内蔵バイアスレジスタ (R1=10KΩ、R2=10KΩ)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

hFE Min

R1 (kΩ)

R2 (kΩ)

R1/R2 Typ

Vi(off) Max (V)

Vi(on) Min (V)

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FJV4102RMTF

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Obsolete

CAD Model

Pb

A

H

P

SOT-23-3

318BM

1

260

REEL

3000

N

PNP

0.1

50

30

10

10

1

-0.5

-3

Price N/A

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