Digital Transistors (BRTs) | FJX3008R

NPNエピタキシャルシリコントランジスター、バイアス抵抗内蔵

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Overview

抵抗内蔵トランジスターは、部品数を減らし回路設計を簡素化することで、優れた省スペース、省コストソリューションを実現します。

  • 100 mA 出力電流能力
  • 内蔵バイアス抵抗 (R1 = 47KΩ、 R2=22KΩ)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

hFE Min

R1 (kΩ)

R2 (kΩ)

R1/R2 Typ

Vi(off) Max (V)

Vi(on) Min (V)

Reference Price

FJX3008RTF

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Obsolete

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419AB

1

260

REEL

3000

N

NPN

0.1

50

56

47

22.3

2.1

0.8

4

Price N/A

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