Digital Transistors (BRTs) | FJX3008R

NPNエピタキシャルシリコントランジスター、バイアス抵抗内蔵

Obsolete

Datasheet

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Overview

抵抗内蔵トランジスターは、部品数を減らし回路設計を簡素化することで、優れた省スペース、省コストソリューションを実現します。

  • 100 mA 出力電流能力
  • 内蔵バイアス抵抗 (R1 = 47KΩ、 R2=22KΩ)

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Product services, tools and other useful resources related to FJX3008R

CAD Model

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Buy/Parametrics Table

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Orderable Parts:

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

hFE Min

R1 (kΩ)

R2 (kΩ)

R1/R2 Typ

Vi(off) Max (V)

Vi(on) Min (V)

Reference Price

FJX3008RTF

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Obsolete

CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419AB

1

260

REEL

3000

N

NPN

0.1

50

56

47

22.3

2.1

0.8

4

Price N/A

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信頼性データ

Die Related Summary Data

Device: FJX3008RTF

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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