Digital Transistors (BRTs) | IMD10A

100mA NBRT および 500mA PBRT で構成されるデュアル・ダイ・パート

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モノリシック・バイアス抵抗ネットワークを備えた NPN および PNP シリコン表面実装トランジスタ。

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Product services, tools and other useful resources related to IMD10A

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

hFE Min

R1 (kΩ)

R2 (kΩ)

R1/R2 Typ

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Vi(on) Min (V)

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IMD10AMT1G

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CAD Model

Pb

A

H

P

SC-74R-6

318AA

1

260

REEL

3000

No

Complementary

0.5

50

68

0.1

10

0.01

-

-

3.00 x 2.75 x 1.00

$0.0957

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NSVIMD10AMT1G

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Active

CAD Model

Pb

A

H

P

SC-74R-6

318AA

1

260

REEL

3000

No

Complementary

0.5

50

68

0.1

10

0.01

-

-

3.00 x 2.75 x 1.00

$0.076

More Details

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信頼性データ

Die Related Summary Data

Device: IMD10AMT1G

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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