General Purpose and Low VCE(sat) Transistors | 2N3055

15 A、60 V NPNバイポーラ・パワートランジスタ

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Overview

PNPバイポーラ・パワートランジスタは、高出力アンプおよびスイッチングアンプ・アプリケーション向けに設計されています。 2N3055 (NPN) および MJ2955 (PNP) は相補型デバイスです。

  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N3055G

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

NPN

General Purpose

3

15

60

100

7

-

1.5

20

70

2.5

115

$2.2473

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