General Purpose and Low VCE(sat) Transistors | 2N3442

10 A、140 V NPN バイポーラ・パワートランジスタ

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Overview

10 A、140 V NPN バイポーラ・パワートランジスタは、ハイファイ・オーディオ・アンプ、シリーズ・レギュレータとシャント・レギュレータ、電源スイッチなどの産業および商業機器のアプリケーション向けに設計されています。

  • Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)
  • Excellent Second Breakdown Capability
  • Pb-Free Package is Available

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N3442G

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Obsolete

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

NPN

General Purpose

5

10

140

160

7

-

5.7

20

70

0.08

117

Price N/A

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信頼性データ

Die Related Summary Data

Device: 2N3442G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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