General Purpose and Low VCE(sat) Transistors | 2N4922

中電力 NPN バイポーラ・パワートランジスタ

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Overview

パワー 3A 80 V バイポーラNPNトランジスタはドライバ回路、スイッチング・アプリケーション、アンプ・アプリケーション向けに設計されています。

  • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
  • Excellent Power Dissipation - PD = 30 W @ TC = 25°C
  • Excellent Safe Operating Area
  • Gain Specified to IC = 1.0 Amp
  • Complement of PNP 2N4918, 2N4919, 2N4920
  • Pb-Free Packages are Available

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Product services, tools and other useful resources related to 2N4922

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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2N4922

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

1

60

-

-

-

-

30

150

3

30

Price N/A

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2N4922G

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Active

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

1

60

60

5

1.3

1.3

30

150

3

30

$0.3189

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信頼性データ

Die Related Summary Data

Device: 2N4922G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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