General Purpose and Low VCE(sat) Transistors | 2N5190

4.0 A、40 V NPN バイポーラ・パワートランジスタ

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Overview

パワー4A、80 V バイポーラ NPN トランジスタはパワーアンプやスイッチング回路で使用します。このトランジスタには優れた安全領域限界があり、PNP 2N5194、2N5195 を補完するものです

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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2N5190

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Obsolete

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

-

General Purpose

0.6

4

-

-

-

-

-

25

100

2

40

Price N/A

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2N5190G

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Active

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

4

40

40

5

-

1.2

25

100

2

40

$0.3423

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信頼性データ

Die Related Summary Data

Device: 2N5190G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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