General Purpose and Low VCE(sat) Transistors | 2N5302

High Power NPN バイポーラ・パワートランジスタ

Obsolete

Datasheet

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Overview

この High Power バイポーラ NPN トランジスタは、パワーアンプおよびスイッチング回路アプリケーション向けに設計されています。

  • Low Collector-Emitter Saturation Voltage
    VCE(sat)=0.75 Vdc (Max) @ IC = 10 Adc
  • Pb-Free Package is Available

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

Reference Price

2N5302G

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Obsolete

CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

No

NPN

General Purpose

0.75

30

60

60

-

1.8

1.7

15

60

2

200

Price N/A

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信頼性データ

Die Related Summary Data

Device: 2N5302G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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