2N5631

高電圧高出力トランジスタ

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... 高出力オーディオアンプ・アプリケーションや高電圧スイッチング・レギュレータ回路で使用するために設計されています。

特長

High Collector Emitter Sustaining Voltage
V_CEO(sus) = 140 Vdc
High DC Current Gain - @ I_C = 8.0 Adc
h_FE = 15 (Min)
Low Collector-Emitter Saturation Voltage
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 10 Adc
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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General Purpose and Low VCE(sat) Transistors | 2N5631

高電圧高出力トランジスタ

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