General Purpose and Low VCE(sat) Transistors | 2N5657

0.5 A、350 V NPN バイポーラ・パワートランジスタ

Obsolete

Datasheet

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Overview

これらのデバイスは、オーディオ出力アンプ、低電流/高電圧コンバータ、AC ライン・リレーなど、ライン式装置での使用向けに設計されています。

  • Excellent DC Current Gain
    hFE = 30-250 @ IC = 100 mAdc
  • Current-Gain - Bandwith Product -
    fT=10MHz (Min) @ IC = 50 mAdc
  • Pb-Free Packages are Available

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状態

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N5657

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

1

0.5

350

-

-

-

-

30

250

10

20

Price N/A

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2N5657G

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

1

0.5

350

375

6

-

-

30

250

10

20

Price N/A

More Details

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信頼性データ

Die Related Summary Data

Device: 2N5657G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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