General Purpose and Low VCE(sat) Transistors | 2N5883

25 A、60 V PNP バイポーラ・パワートランジスタ

Obsolete

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Overview

パワー 25A 80 V バイポーラ NPN トランジスタは、汎用ハイパワーアンプやスイッチングアプリケーションで使用するために設計されています。

  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
  • Low Leakage Current
    ICEX = 1.0 mAdc (max) at Rated Voltage
  • Excellent DC Current Gain
    hFE = 20 (min) at IC = 10 Adc
  • High Current Gain Bandwidth Product
    ft = 4.0 MHz (min) at IC = 1.0 Adc
  • Pb-Free Packages are Available

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Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N5883G

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Obsolete

CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

PNP

General Purpose

1

25

60

60

5

2.5

1.5

20

100

4

200

Price N/A

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信頼性データ

Die Related Summary Data

Device: 2N5883G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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