2N6031

高電圧高出力トランジスタ

Overview

... 高出力オーディオ・アンプ・アプリケーションや高電圧スイッチング・レギュレータ回路で使用するために設計されています。

特長

High Collector Emitter Sustaining Voltage
V_CEO(sus) = 140 Vdc
High DC Current Gain - @ I_C = 8.0 Adc
h_FE = 15 (Min)
Low Collector-Emitter Saturation Voltage
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 10 Adc
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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Orderable Parts:

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

Type

V_CE(sat) Max (V)

I_C Cont. (A)

V_CEO Min (V)

V_CBO (V)

V_EBO (V)

V_BE(sat) (V)

V_BE(on) (V)

h_FE Min

h_FE Max

f_T Min (MHz)

P_TM Max (W)

Reference Price

2N6031G

Obsolete

TO-204-2

1-07

FTRAY

100

General Purpose

200

Price N/A

製品番号:

代理店		Stock	BUY

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General Purpose and Low VCE(sat) Transistors | 2N6031

高電圧高出力トランジスタ

Overview

Product List

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