General Purpose and Low VCE(sat) Transistors | 2N6338

25 A、100 V NPNバイポーラ・パワートランジスタ

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Overview

25A、100 V NPNバイポーラ・パワートランジスタは軍/産業用パワー・アンプやスイッチング回路のアプリケーションで使用するために設計されています。

  • High Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 V
  • High DC Current Gain
    hFE = 30 - 120 @ IC = 10 Adc
    hFE = 12 (Min) @ IC = 25 Adc
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • Fast Switching Times @ IC = 10 Adc
    tr = 0.3 µs (Max)
    ts = 1.0 µs (Max)
    tf = 0.25 µs (Max)
  • Pb-free package

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N6338G

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Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

NPN

General Purpose

1

25

100

100

6

2.5

1.8

30

120

40

200

Price N/A

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信頼性データ

Die Related Summary Data

Device: 2N6338G

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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