General Purpose and Low VCE(sat) Transistors | 2N6338

25 A、100 V NPNバイポーラ・パワートランジスタ

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Overview

25A、100 V NPNバイポーラ・パワートランジスタは軍/産業用パワー・アンプやスイッチング回路のアプリケーションで使用するために設計されています。

  • High Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 V
  • High DC Current Gain
    hFE = 30 - 120 @ IC = 10 Adc
    hFE = 12 (Min) @ IC = 25 Adc
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • Fast Switching Times @ IC = 10 Adc
    tr = 0.3 µs (Max)
    ts = 1.0 µs (Max)
    tf = 0.25 µs (Max)
  • Pb-free package

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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2N6338G

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

NPN

General Purpose

1

25

100

100

6

2.5

1.8

30

120

40

200

Price N/A

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信頼性データ

Die Related Summary Data

Device: 2N6338G

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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