General Purpose and Low VCE(sat) Transistors | 2N6517 (LEGACY FAIRCHILD)

500 mA High Voltage Bipolar Junction Transistors

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Overview

These 500 mA High Voltage Bipolar Junction Transistors are designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

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  • Voltage and Current are Negative for PNP Transistors

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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2N6517BU

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CAD Model

Pb

A

H

P

TO-92-3

135AN

NA

0

BLKBG

10000

N

PNP

General Purpose

0.5

0.5

350

350

6

0.9

2

30

200

40

0.625

Price N/A

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2N6517TA

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CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

PNP

General Purpose

0.5

0.5

350

350

6

0.9

2

30

200

40

0.625

$0.0477

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信頼性データ

Die Related Summary Data

Device: 2N6517BU

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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